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參數(shù)資料
| 型號： | RF1S42N03LSM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET |
| 中文描述： | 42 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 112K |
| 代理商： | RF1S42N03LSM |
6-269
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
10
0
25
50
75
100
125
150
40
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
50
175
30
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
θ
J
,
T
10
-3
10
-2
10
-1
10
0
1
10
-5
10
-4
2
0.01
0.1
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.01
0.02
0.05
0.1
0.2
0.5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
50
1
500
10
1
I
D
,
DC
100
μ
s
100ms
1ms
10ms
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
T
C
= 25
o
C, T
J
= 175
o
C
t, PULSE WIDTH (s)
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,
500
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 5V
T
C
= 25
o
C
V
GS
= 10V
RFP42N03L, RF1S42N03LSM
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