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參數(shù)資料
| 型號： | RF1S25N06SM9A |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直|第25A條（丁）|對263AB |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 418K |
| 代理商： | RF1S25N06SM9A |
2002 Fairchild Semiconductor Corporation
RFP25N06, RF1S25N06, RF1S25N06SM Rev. C
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1600
1200
400
0
0
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
15
20
25
C
800
C
ISS
C
RSS
C
OSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
30
15
0
20
I
g
ACT
(
)
)
--------------------
t, TIME (
μ
s)
80
I
g
ACT
(
)
)
--------------------
10
5.0
2.5
0
V
D
,
V
G
,
60
7.5
45
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
R
L
= 2.4
I
g(REF)
= 0.75mA
V
GS
= 10V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP25N06, RF1S25N06, RF1S25N06SM
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|---|---|
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