參數(shù)資料
型號: REF5045IDGKT
廠商: TEXAS INSTRUMENTS INC
元件分類: 基準電壓源/電流源
英文描述: 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 4.5 V, PDSO8
封裝: PLASTIC, MSOP-8
文件頁數(shù): 12/27頁
文件大?。?/td> 976K
代理商: REF5045IDGKT
SBOS410E – JUNE 2007 – REVISED JUNE 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION(1)
PRODUCT
OUTPUT VOLTAGE
PACKAGE-LEAD
PACKAGE DESIGNATOR
PACKAGE MARKING
STANDARD GRADE (8ppm, 0.1%)
SO-8
D
REF5020
REF5020A
2.048V
MSOP-8
DGK
R50A
SO-8
D
REF5025
REF5025A
2.5V
MSOP-8
DGK
R50B
SO-8
D
REF5030
REF5030A
3.0V
MSOP-8
DGK
R50C
SO-8
D
REF5040
REF5040A
4.096V
MSOP-8
DGK
R50D
SO-8
D
REF5045
REF5045A
4.5V
MSOP-8
DGK
R50E
SO-8
D
REF5050
REF5050A
5.0V
MSOP-8
DGK
R50F
SO-8
D
REF5010
REF5010A
10.0V
MSOP-8
DGK
R50G
HIGH GRADE (3ppm, 0.05%)
SO-8
D
REF5020
REF5020I
2.048V
MSOP-8
DGK
R50A
SO-8
D
REF5025
REF5025I
2.5V
MSOP-8
DGK
R50B
SO-8
D
REF5030
REF5030I
3.0V
MSOP-8
DGK
R50C
SO-8
D
REF5040
REF5040I
4.096V
MSOP-8
DGK
R50D
SO-8
D
REF5045
REF5045I
4.5V
MSOP-8
DGK
R50E
SO-8
D
REF5050
REF5050I
5.0V
MSOP-8
DGK
R50F
SO-8
D
REF5010
REF5010I
10.0V
MSOP-8
DGK
R50G
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
REF50xx
UNIT
Input Voltage
+18
V
Output Short-Circuit
30
mA
Operating Temperature Range
–55 to +125
°C
Storage Temperature Range
–65 to +150
°C
Junction Temperature (TJ max)
+150
°C
Human Body Model (HBM)
3000
V
ESD Rating
Charged Device Model (CDM)
1000
V
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
2
Copyright 2007–2010, Texas Instruments Incorporated
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