參數(shù)資料
型號(hào)： REF19XES3
廠商： Analog Devices, Inc.
英文描述： Precision Micropower, Low Dropout Voltage References
中文描述： 精密微功耗，低壓差電壓基準(zhǔn)
文件頁(yè)數(shù)： 14/24頁(yè)
文件大小： 364K
代理商： REF19XES3
REV. E
–14–
REF19x Series
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
REF19x features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
WAFER TEST LIMITS
Parameter
Symbol
Condition
Limit
Unit
INITIAL ACCURACY
REF191
REF192
REF193
REF194
REF195
REF196
REF198
V
O
2.043/2.053
2.495/2.505
2.990/3.010
4.495/4.505
4.995/5.005
3.290/3.310
4.091/4.101
V
V
V
V
V
V
V
LINE REGULATION
V
O
/ V
IN
V
O
/ I
LOAD
V
O
–
V+
(V
O
+ 0.5 V) < V
IN
< 15 V, I
OUT
= 0 mA
0 mA < I
LOAD
< 30 mA, V
IN
= (V
O
+ 1.3 V)
I
LOAD
= 10 mA
I
LOAD
= 30 mA
15
ppm/V
LOAD REGULATION
15
ppm/mA
DROPOUT VOLTAGE
1.25
1.55
V
V
SLEEP
MODE INPUT
Logic Input High
Logic Input Low
V
IH
V
IL
V
IN
= 15 V
2.4
0.8
V
V
μ
A
μ
A
SUPPLY CURRENT
Sleep Mode
No Load
No Load
45
15
For proper operation, a 1
μ
F capacitor is required between the output pins and the GND pin of the REF19x. Electrical tests and wafer probe to the limits shown.
Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications
based on dice lot qualifications through sample lot assembly and testing.
DICE CHARACTERISTICS
OUTPUT
6
OUTPUT
6
2
V
3
SLEEP
4
GND
REF19x Die Size 0.041” 0.057”, 2,337 Square Mils
Substrate Is Connected to V+, Number of Transistors:
Bipolar 25, MOSFET4. Process: CBCMOS1
(@ I
LOAD
= 0 mA, T
A
= 25 C, unless otherwise noted.)
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .
–
0.3 V, +18 V
Output to GND . . . . . . . . . . . . . . . . . . . . .
–
0.3 V, V
S
+ 0.3 V
Output to GND Short-Circuit Duration . . . . . . . . . Indefinite
Storage Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . .
–
65
°
C to +150
°
C
Operating Temperature Range
REF19x . . . . . . . . . . . . . . . . . . . . . . . . . . .
–
40
°
C to +85
°
C
Junction Temperature Range
P, S Package . . . . . . . . . . . . . . . . . . . . . . .
–
65
°
C to +150
°
C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300
°
C
Package Type
JA2
103
158
240
JC
Unit
°
C/W
°
C/W
°
C/W
8-Lead PDIP (P)
8-Lead SOIC (S)
8-Lead TSSOP (RU)
43
43
43
NOTES
1
Absolute maximum rating applies to both DICE and packaged parts, unless
otherwise noted.
2
θ
JA
is specified for worst case conditions, i.e.,
θ
JA
is specified for device in socket for
PDIP, and
θ
JA
is specified for device soldered in circuit board for SOIC package.
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