參數(shù)資料
型號: RE46C167SW16F
元件分類: 模擬信號調理
英文描述: SPECIALTY ANALOG CIRCUIT, PDSO16
封裝: 7.50 MM, ROHS COMPLIANT, PLASTIC, WSOIC-16
文件頁數(shù): 7/30頁
文件大小: 443K
代理商: RE46C167SW16F
2010 Microchip Technology Inc.
DS22251A-page 15
RE46C165/6/7/8
FIGURE 3-1:
RE46C165/6/7/8 Timing Diagram – Standby, Low Battery, Chamber Fail.
TABLE 3-1:
DIAGNOSTIC MODE PIN FUNCTION
Pin Name
Pin
Number
Function
I/O
7
Disabled as an output. A high on this pin directs the photo amplifier output to pin C1 or
C2, determined by the level on VSEN. Amplification occurs during the IRED active time.
VSEN
15
If I/O is high, then this pin controls the gain capacitor that is used. If VSEN is low, the
normal gain is selected and the photo amplifier output appears on C1. If VSEN is high,
high gain is selected, and the photo amplifier output is on C2.
FEED
10
If VSEN is low, then taking this input high will enable hysteresis, which is a nominal
10% gain increase in normal gain mode.
COSC
12
If desired, this pin can be driven by an external clock.
HORNB
8
This pin becomes the smoke integrator output. A high level indicates that an alarm con-
dition has been detected.
LED
11
The LED pin is used as a low battery indicator. For VDD above the low battery thresh-
old, the open drain NMOS is off. If VDD falls below the threshold, the NMOS turns on.
Standby, No Alarm (not to Scale)
Oscillator
T
POSC
T
IRON
Internal Clock
T
STON
T
PER0
STROBE
T
IRON
IRED
T
PLED1
LED
Low Supply Test Failure
LED
STROBE
Low Battery Test
Low BatteryTest
T
HON2
Low BatteryWarning Chirp
T
HOF3
Horn
T
HPER2
T
PER6
Chamber Fail Test Failure
STROBE
Chamber Fail Test
T
HON2
T
HOF4
T
HOF5
Horn
T
HPER2
Chamber Test and Warning is Offset from Low Battery Test and Warning by 21.3 Seconds.
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