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參數(shù)資料
| 型號(hào)： | RD70HHF1 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Silicon MOSFET Power Transistor 30MHz, 70W |
| 中文描述： | 硅MOSFET功率晶體管的30MHz，70W功率 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 181K |
| 代理商： | RD70HHF1 |
MITSUBISHI RF POWER MOS FET
RD70HHF1
Silicon MOSFET Power Transistor 30MHz,70W
RD70HHF1
MITSUBISHI ELECTRIC
REV.5 2 APRIL. 2004
1/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD70HHF1 is a MOS FET type transistor specifically
designed for HF High power amplifiers applications.
FEATURES
High power and High Gain:
Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz
High Efficiency: 60%typ.on HF Band
APPLICATION
For output stage of high power amplifiers in HF
Band mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
V
DSS
Drain to source voltage
V
GSS
Gate to source voltage
Pch
Channel dissipation
Pin
Input power
ID
Drain current
Tch
Channel Temperature
Tstg
Storage temperature
Rth j-c
Thermal resistance
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
I
DSS
Zero gate voltage drain current V
DS
=17V, V
GS
=0V
I
GSS
Gate to source leak current
V
GS
=10V, V
DS
=0V
V
TH
Gate threshold voltage
V
DS
=12V, I
DS
=1mA
Pout
Output power
f=30MHz ,V
DD
=12.5V
η
D
Drain efficiency
Pin=3.5W,Idq=1.0A
Load VSWR tolerance
V
DD
=15.2V,Po=70W(Pin Control)
f=30MHz,Idq=1.0A,Zg=50
Load VSWR=20:1(All Phase)
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
junction to case
RATINGS
50
+/-20
150
5
20
175
-40 to +175
1.0
UNIT
V
V
W
W
A
°C
°C
°C/W
CONDITIONS
LIMITS
TYP
-
-
-
80
60
No destroy
UNIT
uA
uA
V
W
%
-
MIN
-
-
1.5
70
55
MAX.
10
1
4.5
-
-
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
9
3
4-C2
1
R1.6+/-0.15
2
18.5+/-0.3
5.0+/-0.3
3
25.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
2
4.5+/-0.7
6.2+/-0.7
0.1
+0.05
-0.01
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
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