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參數(shù)資料
| 型號(hào)： | RD45HMF1 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Silicon MOSFET Power Transistor 900MHz,45W |
| 中文描述： | 硅MOSFET功率晶體管的頻率是900MHz，45瓦 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 321K |
| 代理商： | RD45HMF1 |
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
RD45HMF1
MITSUBISHI ELECTRIC
REV.2 7 Apr. 2003
1/7
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
RD45HMF1 is a MOS FET type transistor specifically
designed for 900MHz-band High power amplifiers
applications.
FEATURES
High power and High Gain:
Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz
High Efficiency: 50%typ.
APPLICATION
For output stage of high power amplifiers in
800-900MHz Band mobile radio sets.
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
V
DSS
Drain to source voltage
V
GSS
Gate to source voltage
Pch
Channel dissipation
Pin
Input power
ID
Drain current
Tch
Channel temperature
Tstg
Storage temperature
Rth j-c
Thermal resistance
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25
°C
UNLESS OTHERWISE NOTED)
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
-
-
-
junction to case
RATINGS
30
+/-20
125
25
15
175
-40 to +175
1.2
UNIT
V
V
W
W
A
°C
°C
°C/W
LIMITS
TYP
-
-
-
50
50
No destroy
UNIT
uA
uA
V
W
%
-
SYMBOL
PARAMETER
CONDITIONS
MIN
-
-
1.0
45
45
MAX.
10
1
3.0
-
-
I
DSS
I
GSS
V
TH
Pout
η
D
Zerogate voltage drain current V
DS
=17V, V
GS
=0V
Gate to source leak current
Gate threshold voltage
Output power
Drain efficiency
Load VSWR tolerance
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
f=900MHz ,V
DD
=12.5V
Pin=15W,Idq=2.0A
V
DD
=15.2V,Po=45W(PinControl)
Idq=2.0A,Zg=50
Load VSWR=20:1(All Phase)
Note : Above parameters , ratings , limits and conditions are subject to change.
OUTLINE DRAWING
9
R1.6+/-0.15
25.0+/-0.3
18.5+/-0.3
2
3
5.0+/-0.3
7.0+/-0.5 11.0+/-0.3
1
4.5+/-0.7
6.2+/-0.7
PIN
1.DRAIN
2.SOURCE
3.GATE
UNIT:mm
3
0.1
4-C2
1
2
+0.05
-0.01
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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