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參數(shù)資料
| 型號： | RD28F3208C3B90 |
| 廠商： | INTEL CORP |
| 元件分類： | 存儲器 |
| 英文描述： | TVS BIDIRECT 400W 90V SMA |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA66 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66 |
| 文件頁數(shù)： | 23/70頁 |
| 文件大?。?/td> | 1223K |
| 代理商： | RD28F3208C3B90 |
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3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
Datasheet
23
4.0
PowerandResetConsiderations
4.1
Power-Up/DownCharacteristics
Inordertopreventanyconditionthatmayresultinaspuriouswriteoreraseoperation,itis
recommendedtopower-upF-V
CC
,F-V
CCQ
andS-V
CC
together.Conversely,F-V
CC
,F-V
CCQ
and
S-V
CC
mustpower-downtogether.Itisalsorecommendedtopower-upF-V
PP
withorslightlyafter
F-V
CC
.Conversely,F-V
PP
mustpowerdownwithorslightlybeforeF-V
CC
.
IfF-V
CCQ
and/orF-V
PP
arenotconnectedtotheF-V
CC
supply,thenF-V
CC
shouldattainF-
V
CC
MinbeforeapplyingF-V
CCQ
andF-V
PP
.Deviceinputsshouldnotbedrivenbeforesupply
voltage=F-V
CC
Min.PowersupplytransitionsshouldonlyoccurwhenF-RP#islow.
4.2
AdditionalFlashFeatures
Intel3VoltAdvanced+Stacked-CSPproductsprovidein-systemprogramminganderaseinthe
1.65 V–3.3 Vrange.Forfastproductionprogramming,italsoincludesalow-cost,backward-
compatible12 Vprogrammingfeature.
4.2.1
Improved12 VoltProductionProgramming
WhenF-V
PP
isbetween1.65 Vand3.3 V,allprogramanderasecurrentisdrawnthroughthe
F-V
CC
signal.NotethatifF-V
PP
isdrivenbyalogicsignal,V
IH
min=1.65 V.Thatis,F-V
PP
must
remainabove1.65 Vtoperformin-systemflashmodifications.WhenF-V
PP
isconnectedtoa12 V
powersupply,thedevicedrawsprogramanderasecurrentdirectlyfromtheF-V
PP
signal.This
eliminatestheneedforanexternalswitchingtransistortocontrolthevoltageF-V
PP
.
Figure12,
“ExamplePowerSupplyConfigurations”onpage 42
showsexamplesofhowtheflashpower
suppliescanbeconfiguredforvarioususagemodels.
The12 VF-V
PP
modeenhancesprogrammingperformanceduringtheshortperiodoftime
typicallyfoundinmanufacturingprocesses;however,itisnotintendedforextendeduse.12 Vmay
beappliedtoF-V
PP
duringprogramanderaseoperationsforamaximumof1000cyclesonthe
mainblocksand2500cyclesontheparameterblocks.F-V
PP
maybeconnectedto12 Vforatotal
of80hoursmaximum.Stressingthedevicebeyondtheselimitsmaycausepermanentdamage.
4.2.2
F-V
PP
≤
V
PPLK
forCompleteProtection
Inadditiontotheflexibleblocklocking,theF-V
PP
programmingvoltagecanbeheldlowfor
absolutehardwarewriteprotectionofallblocksintheflashdevice.WhenF-V
PP
isbelowV
PPLK
,
anyprogramoreraseoperationwillresultinaerror,promptingthecorrespondingstatusregisterbit
(SR.3)tobeset.
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