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參數(shù)資料
| 型號： | RD28F1602C3TD70 |
| 廠商： | INTEL CORP |
| 元件分類： | 存儲器 |
| 英文描述： | 3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| 中文描述： | SPECIALTY MEMORY CIRCUIT, PBGA66 |
| 封裝： | 8 X 10 MM, 1.20 MM HEIGHT, SCSP-66 |
| 文件頁數(shù)： | 18/70頁 |
| 文件大小： | 1223K |
| 代理商： | RD28F1602C3TD70 |
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3VoltIntel
Advanced+BootBlockFlashMemoryStacked-CSPFamily
18
Datasheet
3.7
BlockLocking
Theinstant,individualblocklockingfeaturethatallowsanyflashblocktobelockedorunlocked
withnolatency,whichenablesinstantcodeanddataprotection.
Thislockingofferstwolevelsofprotection.Thefirstlevelallowssoftware-onlycontrolofblock
locking(usefulfordatablocksthatchangefrequently),whilethesecondlevelrequireshardware
interactionbeforelockingcanbechanged(usefulforcodeblocksthatchangeinfrequently).
Thefollowingsectionswilldiscusstheoperationofthelockingsystem.Theterm“state[XYZ]”
willbeusedtospecifylockingstates;e.g.,“state[001],”whereX = valueofWP#,Y = bitDQ
1
of
theBlockLockstatusregister,andZ = bitDQ
0
oftheBlockLockstatusregister.
Table 8,“Block
LockingStateTransitions”onpage 21
definesallofthesepossiblelockingstates.
Table6. FlashMemoryStatusRegisterDefinition
WSMS
ESS
ES
PS
VPPS
PSS
BLS
R
7
6
5
4
3
2
1
0
NOTES:
SR.7WRITESTATEMACHINESTATUS
1 = Ready(WSMS)
0 = Busy
CheckWriteStateMachinebitfirsttodetermineWordProgramor
BlockErasecompletion,beforecheckingProgramorEraseStatus
bits.
SR.6 = ERASE
-
SUSPENDSTATUS(ESS)
1 = EraseSuspended
0 = EraseInProgress/Completed
WhenEraseSuspendisissued,WSMhaltsexecutionandsets
bothWSMSandESSbitsto“1.”ESSbitremainssetto“1”untilan
EraseResumecommandisissued.
SR.5 = ERASESTATUS(ES)
1 = ErrorInBlockErase
0 = SuccessfulBlockErase
Whenthisbitissetto“1,”WSMhasappliedthemax.numberof
erasepulsesandisstillunabletoverifysuccessfulblockerasure.
SR.4 = PROGRAMSTATUS(PS)
1 = ErrorinProgramming
0 = SuccessfulProgramming
Whenthisbitissetto“1,”WSMhasattemptedbutfailedto
programaword/byte.
SR.3 = F-V
PP
STATUS(VPPS)
1 = F-V
PP
LowDetect,OperationAbort
0 = F-V
PP
OK
TheF-V
PP
statusbitdoesnotprovidecontinuousindicationofV
PP
level.TheWSMinterrogatesF-V
PP
levelonlyaftertheProgramor
Erasecommandsequenceshavebeenentered,andinformsthe
systemifF-V
PP
hasnotbeenswitchedon.TheF-V
PP
isalso
checkedbeforetheoperationisverifiedbytheWSM.TheF-V
PP
statusbitisnotguaranteedtoreportaccuratefeedbackbetween
V
PPLK
andV
PP1
min.
SR.2 = PROGRAMSUSPENDSTATUS(PSS)
1 = ProgramSuspended
0 = PrograminProgress/Completed
WhenProgramSuspendisissued,WSMhaltsexecutionandsets
bothWSMSandPSSbitsto“1.”PSSbitremainssetto“1”untila
ProgramResumecommandisissued.
SR.1 = BLOCKLOCKSTATUS
1 = Prog/Eraseattemptedonalockedblock;Operation
aborted.
0 = Nooperationtolockedblocks
Ifaprogramoreraseoperationisattemptedtooneofthelocked
blocks,thisbitissetbytheWSM.Theoperationspecifiedis
abortedandthedeviceisreturnedtoreadstatusmode.
SR.0 = RESERVEDFORFUTUREENHANCEMENTS(R)
Thisbitisreservedforfutureuseandshouldbemaskedoutwhen
pollingthestatusregister.
NOTE:
ACommandSequenceErrorisindicatedwhenSR.4,SR.5andSR.7areset.
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相關代理商/技術參數(shù) |
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| RD28F1604C3B110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
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| RD28F1604C3BD70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
| RD28F1604C3BD70A | 功能描述:IC FLASH 16MBIT 70NS 66EBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 |
| RD28F1604C3T110 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT INTEL Advanced+ Boot Block Flash Memory (C3) Stacked-Chip ScalPackage Familye |
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