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參數(shù)資料
| 型號： | RD24ESAB3 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 23.78 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-34 |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 105K |
| 代理商： | RD24ESAB3 |
5
RD2.0ES to RD39ES
Data Sheet D13935EJ7V0DS
Fig. 6
POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Fig. 7
THERMAL RESISTANCE vs.
SIZE OF P.C BOARD
Fig. 8
DYNAMIC IMPEDANCE vs.
ZENER CURRENT
Fig. 9
ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
Fig. 10 SURGE REVERSE POWER RATINGS
0.08
0.06
0.04
0.02
0
–
0.02
–
0.04
–
0.06
32
0.1
TYP.
40
24
16
8
0
–
8
–
16
–
24
–
0.08
–
32
–
0.1
–
40
8
4
12
16
20
γ
Z
–
Z
–
°
C
γ
Z
–
Z
–
°
C
24
28
32
36
40
mV/
°
C
RD2.0ES to RD39ES
%/
°
C
V
Z
–
Zener Voltage
–
V
44
0
500
400
300
200
100
0
20
40
60
80
100
T
A
–
Ambient Temperature
–
°
C
P
–
–
120 140 160 180
200
= 5 mm
= 10 mm
7 mm P.C. Board
t = 0.035 mm
= 5 mm
= 10 mm
= 3 mm
φ
= 3 mm
3 mm P.C. Board
t = 0.035 mm
φ
500
400
300
200
100
0
20
40
S
–
Size of P.C. Board
–
mm
2
R
t
–
–
°
C
60
80
100
= 10 mm
= 5mm
= 3mm
S
Junction to ambient
1000
100
10
TYP.
1
0.01
0.1
I
Z
–
Zener Current
–
mA
Z
Z
–
–
10
1
100
RD3.3ES
RD2.0ES
RD15ES
RD39ES
RD20ES
RD10ES
RD75ES
R51S
RD3.9ES
RD4.7ES
1000
T
A
=25
°
C
Non-Repetitive
P
R
t
T
100
10
11
10
100 m
μ
μ
100
1 m
10 m
μ
t
T
–
Pulse Width
–
s
P
R
–
–
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RD24ES-AZ(AB2) | 制造商:Renesas Electronics 功能描述:Bulk |
| RD24ES-AZ-AB3 | 制造商:Renesas Electronics Corporation 功能描述: |
| RD24ES-AZ-AB4 | 制造商:Renesas Electronics 功能描述:Bulk |
| RD24F | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:ZENER DIODES |
| RD24FM | 制造商:NEC 制造商全稱:NEC 功能描述:ZENER DIODES |
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