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參數(shù)資料
| 型號(hào)： | RBV806D |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | SILICON BRIDGE RECTIFIERS |
| 中文描述： | 硅橋式整流器 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 19K |
| 代理商： | RBV806D |
RATING AND CHARACTERISTIC CURVES ( RBV800D - RBV810D )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
0
25
50
75
100
125
150
175
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
100
PER DIODE
FORWARD VOLTAGE, VOLTS
Tc = 50
°
C
HEAT-SINK MOUNTING,
3.2" x 3.2" x 0.12" THK.
(8.2cm x 8.2cm x 0.3cm) Al.-PLATE
8.0
6.0
4.0
2.0
12
10
1.0
200
0
300
0
150
100
50
0.1
10
80
0.01
0.01
1.0
0.1
100
140
0
20
40
60
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
P
A
A
A
F
R
M
T
J
= 25
°
C
Pulse Width = 300
μ
s
1 % Duty Cycle
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
T
J
= 50
°
C
T
J
= 100
°
C
T
J
= 25
°
C
10
250
10
20
60
1
2
4
6
40
100
1.4
1.6
0.4
0.6
0.8
1.0
1.2
1.8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RBV810D | SILICON BRIDGE RECTIFIERS |
| RBV808D | SILICON BRIDGE RECTIFIERS |
| RBV800 | SILICON BRIDGE RECTIFIERS |
| RBV801 | SILICON BRIDGE RECTIFIERS |
| RBV802 | SILICON BRIDGE RECTIFIERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RBV806S | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:Molding Single-Phase Bridge Rectifier |
| RBV808 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV808D | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV810 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV810D | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
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