- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368442 > RBV608G (樂山無線電股份有限公司) 6.0A BRIDGE RECTIFIERS PDF資料下載
參數(shù)資料
| 型號： | RBV608G |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | 6.0A BRIDGE RECTIFIERS |
| 中文描述： | 6.0a下橋式整流器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 54K |
| 代理商： | RBV608G |
LESHAN RADIO COMPANY, LTD.
11C–1/2
RBV601G
RBV602G
RBV604G
RBV606G
RBV608G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°
C ambient temperature unless otherwise specified. Single phase,half wave,
60Hz,resistive or inductive load. For capacitive load,derate current by 20%.
6.0A
6.0A BRIDGE RECTIFIERS
RBV601G – RBV608G
D5SB10 –D5SB80
TYPE
PRV
V
PK
Maximum
Average
Forward
Output
Current
@T
A
= 70
°
C
Maximum
Forward Peak
Surge Current
@ 8.3ms
Superimposed
Maximum DC
Forward Voltage
drop per element
at I
F
=3.0ADC
I
O
A
AV
I
FM
(Surge)
A
PK
I
R
25
°
CTA
μ
ADC
125
°
CTA
μ
ADC
T
J
°C
Package
Dimensions
Maximum DC
Reverse Current
at rated DC
Blocking Voltage
per element
V
F
V
PK
Maximum
Peak
Reverse
Voltage
D5 – SB
6.0
150
10
500
150
1.1
D5SB10
D5SB20
D5SB40
D5SB60
D5SB80
100
200
400
600
800
Operating
Junction
Temperature
C3
D5 – SB
30 ± 0.3
2
1
4
5
2.5 ± 0.2
2.2 ± 0.2
1 ± 0.1
10 ± 0.2
7.5 ± 0.2
4.6 ± 0.2
3.6 ± 0.2
φ
3.2 ± 0.2
2.7 ± 0.2
0.7 ± 0.1
1
相關PDF資料 |
PDF描述 |
|---|---|
| RBV800D | SILICON BRIDGE RECTIFIERS |
| RBV801D | SILICON BRIDGE RECTIFIERS |
| RBV802D | SILICON BRIDGE RECTIFIERS |
| RBV804D | SILICON BRIDGE RECTIFIERS |
| RBV806D | SILICON BRIDGE RECTIFIERS |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RBV610 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV610D | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV800 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV800_05 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SILICON BRIDGE RECTIFIERS |
| RBV8005 | 制造商:LUGUANG 制造商全稱:Shenzhen Luguang Electronic Technology Co., Ltd 功能描述:Silicon Bridge Rectifiers |
發(fā)布緊急采購，3分鐘左右您將得到回復。