參數(shù)資料
型號: RB751S40TD
廠商: ON SEMICONDUCTOR
英文描述: Schottky Barrier Diode
中文描述: 肖特基勢壘二極管
文件頁數(shù): 2/4頁
文件大?。?/td> 47K
代理商: RB751S40TD
RB751S40T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(I
R
= 10 A)
V
(BR)R
30
V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
2.0
2.5
pF
Reverse Leakage
(V
R
= 30 V)
I
R
300
500
nAdc
Forward Voltage
(I
F
= 1.0 mAdc)
V
F
0.28
0.37
Vdc
25
°
C
125
°
C
85
°
C
T
A
= 150
°
C
0
0.05
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
0.1
10
1.0
0.1
85
°
C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.5
0
C
2.0
4.0
I
Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
40
°
C
25
°
C
IR
μ
A
55
°
C
150
°
C
125
°
C
1000
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
10
15
20
25
30
35
1.0
1.5
2.0
2.5
3.0
6.0
8.0
10
12
14
16
18
100
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