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參數(shù)資料
| 型號(hào)： | RA45H4047M |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO |
| 中文描述： | 三菱射頻MOSFET模塊400 - 470MHz的45瓦12.5V移動(dòng)通信 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | RA45H4047M |
MITSUBISHI RF POWER MODULE
R A45H4047M
RA45H4047M
MITSUBISHI ELECTRIC
3/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
f=400MHz,
V
GG
=5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
100
f=430MHz,
V
GG
=5V,
P
in
=50mW
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
10
12
14
16
18
20
D
D
(
P
out
I
DD
0
10
20
30
40
50
-15
-10
INPUT POWER P
in
(dBm)
-5
0
5
10
15
20
O
P
o
(
P
0
4
8
12
16
20
24
D
D
(
f=450MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
0
10
20
30
40
50
60
70
80
90
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
10
12
14
16
18
20
D
D
(
P
out
I
DD
0
10
20
30
40
50
-15
-10
INPUT POWER P
in
(dBm)
-5
0
5
10
15
20
O
P
o
(
P
0
4
8
12
16
20
24
D
D
(
f=470MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
80
2
nd
, 3
rd
HARMONICS versus FREQUENCY
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
0
10
20
30
40
50
60
70
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
O
o
(
I
ρ
i
0
10
20
30
40
50
60
70
80
T
η
T
(
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
P
out
h
T
r
in
0
10
20
30
40
50
-15
-10
INPUT POWER P
in
(dBm)
-5
0
5
10
15
20
O
P
o
(
P
0
4
8
12
16
20
24
D
D
(
f=400MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
I
DD
Gp
0
10
20
30
40
50
-15
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
O
P
o
(
P
0
4
8
12
16
20
24
D
I
D
(
f=430MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
-70
-60
-50
-40
-30
-20
390 400 410 420 430 440 450 460 470 480
FREQUENCY f(MHz)
H
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
2
nd
3
rd
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA45H4047M-E01 | MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO |
| RA506 | 50.0 Amp High Current Plastic Silicon Rectifier 50 to 1000 Volts |
| RA507 | 50.0 Amp High Current Plastic Silicon Rectifier 50 to 1000 Volts |
| RA501 | 50.0 Amp High Current Plastic Silicon Rectifier 50 to 1000 Volts |
| RA502 | 50.0 Amp High Current Plastic Silicon Rectifier 50 to 1000 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA45H4047M_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance, 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA45H4047M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA45H4047M_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA45H4047M-01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO |
| RA45H4047M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:400-470MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO |
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