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參數(shù)資料
| 型號： | RA30H3340M |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MITSUBISHI RF MOSFET MODULE |
| 中文描述： | 三菱射頻MOSFET模塊 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 108K |
| 代理商： | RA30H3340M |
MITSUBISHI RF POWER MODULE
R A30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
7/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
PRECAUTIONS, RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered on a copper flange. For mechanical protection a plastic cap is
attached by Silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the substrate and
coated by resin. Lines on the substrate (eventually inductors), chip capacitors and resistors form the bias and matching
circuits. Wire leads soldered onto the alumina substrate provide DC and RF connection.
Following conditions shall be avoided:
a) Bending forces on the alumina substrate (for example during srewing or by fast thermal changes)
b) Mechanical stress on the wire leads (for example by first soldering then screwing or by thermal expansion)
c) Defluxing solvents reacting with the resin coating the MOSFET chips (for example Trichlorethylene)
d) Frequent on/off switching causing thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, oscillation, etc.
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
The heat sink flatness shall be less than 50μm (not flat heat sink or particles between module and heat sink may cause
the ceramic substrate in the module to crack by bending forces, either immediately when screwing or later when
thermal expansion forces are added).
Thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce
the bending stress on the ceramic substrate caused by temperature difference to the heat sink.
The module shall first be screwed to the heat sink, after this the leads can be soldered to the PCB.
M3 screws are recommended with tightening torque 0.4 to 0.6Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads shall be soldered after the module is screwed onto the heat sink.
The soldering temperature shall be lower than 260°C for maximum 10 seconds, or lower than 350°C for maximum 3
seconds.
Ethyl Alcohol is recommend to remove flux. Trichlorethylene type solvents must not be used (they may cause bubbles
in the coating of the transistor chips, which can lift off bond wires).
Thermal Design of the Heat Sink:
At P
out
=30W, V
DD
=12.5V and P
in
=50mW each stage transistor operating conditions are:
P
in
(W)
(W)
(°C/W)
1
st
0.05
5.0
2
nd
1.5
9.0
2.4
3
rd
9.0
30.0
1.2
The channel temperatures of each stage transistor T
ch
= T
case
+ (V
DD
x I
DD
- P
out
+ P
in
) x R
th(ch-case)
are:
T
ch1
= T
case
+ (12.5V x 0.30A - 1.5W + 0.05W) x 5.0°C/W
T
ch2
= T
case
+ (12.5V x 1.50A - 9.0W + 1.50W) x 2.4°C/W
T
ch3
= T
case
+ (12.5V x 4.20A - 30.0W + 9.0W) x 1.2°C/W
For long term reliability the module case temperature T
case
is better kept below 90°C. For an ambient temperature
T
air
=60°C and P
out
=30W the required thermal resistance R
th (case-air)
= ( T
case
- T
air
) / ( (P
out
/
η
T
) - P
out
+ P
in
) of the heat sink,
including the contact resistance, is:
R
th(case-air)
= (90°C - 60°C) / (30W/40% – 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor
is:
T
ch1
= T
air
+ 41.5 °C
T
ch2
= T
air
+ 57.0 °C
T
ch3
= T
air
+ 67.8 °C
175°C maximum rating for the channel temperature ensures application under derated conditions.
Stage
P
out
R
th(ch-case)
I
DD
@
η
T
=40%
(A)
0.30
1.50
4.20
V
DD
(V)
12.5
= T
case
+ 11.5 °C
= T
case
+ 27.0 °C
= T
case
+ 37.8 °C
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| RA30H3340M_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA30H3340M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA30H3340M_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA30H3340M-01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MITSUBISHI RF MOSFET MODULE |
| RA30H3340M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO |
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