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參數(shù)資料
| 型號： | RA30H3340M-01 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MITSUBISHI RF MOSFET MODULE |
| 中文描述： | 三菱射頻MOSFET模塊 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 108K |
| 代理商： | RA30H3340M-01 |
MITSUBISHI RF POWER MODULE
R A30H3340M
RA30H3340M
MITSUBISHI ELECTRIC
3/9
2 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
2
nd
, 3
rd
HARMONICS versus FREQUENCY
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
Gp
0
10
20
30
40
50
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
O
o
(
I
ρ
i
0
20
40
60
80
100
120
T
η
T
(
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
P
out
h
T
r
in
0
10
20
30
40
50
-10
-5
INPUT POWER P
in
(dBm)
0
5
10
15
20
O
P
o
(
P
0
2
4
6
8
10
12
D
I
D
(
f=330MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
I
DD
Gp
0
10
20
30
40
50
-10
-5
INPUT POWER P
in
(dBm)
0
5
10
15
20
O
P
o
(
P
0
2
4
6
8
10
12
D
I
D
(
f=365MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
I
DD
-70
-60
-50
-40
-30
-20
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
H
V
DD
=12.5V
V
GG
=5V
P
in
=50mW
2
nd
3
rd
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
90
f=330MHz,
V
GG
=5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
90
f=365MHz,
V
GG
=5V,
P
in
=50mW
0
10
20
30
40
50
60
70
80
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
10
12
14
16
18
D
D
(
P
out
I
DD
0
10
20
30
40
50
-10
-5
INPUT POWER P
in
(dBm)
0
5
10
15
20
O
P
o
(
P
0
2
4
6
8
10
12
D
I
D
(
f=400MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
0
10
20
30
40
50
60
70
80
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
10
12
14
16
18
D
D
(
P
out
I
DD
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA30H3340M-E01 | MITSUBISHI RF MOSFET MODULE |
| RA30H4047M | 400-470MHz 30W 12.5V MOBILE RADIO |
| RA30H4047M-01 | 400-470MHz 30W 12.5V MOBILE RADIO |
| RA30H4047M-E01 | 400-470MHz 30W 12.5V MOBILE RADIO |
| RA30H4452M-01 | 440-520MHz 30W 12.5V MOBILE RADIO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA30H3340M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA30H3340M-E01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MITSUBISHI RF MOSFET MODULE |
| RA30H4047M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA30H4047M_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA30H4047M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:400-470MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO |
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