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參數(shù)資料
| 型號： | RA20H8994M |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| 中文描述： | 896-902 / 935 - 941MHz 20瓦12.5V，3階段制造。對于移動(dòng)通信 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 68K |
| 代理商： | RA20H8994M |
MITSUBISHI RF POWER MODULE
R A 2 0 H 8 9 9 4 M
RA20H8994M
MITSUBISHI ELECTRIC
3/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
60
2
nd
, 3
rd
HARMONICS versus FREQUENCY
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
0
10
20
30
40
50
885
895
905
FREQUENCY f(MHz)
915
925
935
945
955
O
o
(
I
ρ
i
0
10
20
30
40
50
60
T
η
T
(
V
DD
=12.5V
P
in
=50mW
P
out
@V
GG
=5V
h
T
@P
out
=20W
r
in
@P
out
=20W
0
10
20
30
40
50
-15
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
O
o
(
P
0
4
8
12
16
20
24
D
D
(
f=896MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
I
DD
Gp
0
10
20
30
40
50
-15
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
O
o
(
P
0
4
8
12
16
20
24
D
I
D
(
f=902MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
-70
-60
-50
-40
-30
-20
885
895
905
FREQUENCY f(MHz)
915
925
935
945
955
H
V
DD
=12.5V
P
in
=50mW
2
nd
@P
out
=20W
3
rd
@P
out
=20W
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
80
0
10
20
30
40
50
60
70
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
10
12
14
16
D
D
(
P
out
f=896MHz,
V
GG
=5V,
P
in
=50mW
I
DD
0
10
20
30
40
50
-15
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
O
o
(
P
0
4
8
12
16
20
24
D
D
(
f=935MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
0
10
20
30
40
50
60
70
2
4
6
8
10
12
14
16
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
10
12
14
16
D
D
(
P
out
f=902MHz,
V
GG
=5V,
P
in
=50mW
I
DD
0
10
20
30
40
50
-15
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
O
o
(
P
0
4
8
12
16
20
24
D
D
(
f=941MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA20H8994M-E01 | 896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA254 | 25.0 Amp High Current Plastic Silicon Rectifier 50 to 1000 Volts |
| RA253 | Silicon Rectifier Button-Cells |
| RA254 | Silicon Rectifier Button-Cells |
| RA255 | Silicon Rectifier Button-Cells |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA20H8994M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA20H8994M_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA20H8994M-01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA20H8994M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:896-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO |
| RA20H8994M-E01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:896-902/ 935-941MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO |
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