參數(shù)資料
型號(hào)： RA18H1213G-01
廠商： Mitsubishi Electric Corporation
英文描述： 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
中文描述： 1.24 - 1.30GHz 18W 12.5V，3階段制造。對(duì)于移動(dòng)通信
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 96K
代理商： RA18H1213G-01
MITSUBISHI RF POWER MODULE
R A18H1213G
RA18H1213G
MITSUBISHI ELECTRIC
3/9
5 April 2004
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
INPUT POWER P
in
(dBm)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
40
2
nd
, 3
rd
HARMONICS versus FREQUENCY
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
50
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
50
f=1270MHz,
V
GG
=5V,
P
in
=200mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
50
f=1300MHz,
V
GG
=5V,
P
in
=200mW
0
1220
10
20
30
1240
1260
1280
1300
1320
FREQUENCY f(MHz)
O
o
(
I
ρ
i
0
10
20
30
40
50
60
70
80
T
η
T
(
V
DD
=12.5V
V
GG
=5V
P
in
=200mW
P
out
h
T
r
in
0
10
20
30
40
0
5
10
15
20
25
INPUT POWER P
in
(dBm)
O
P
o
(
P
0
2
4
6
8
10
D
D
(
f=1240MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
I
DD
Gp
0
10
20
30
40
0
5
10
15
20
25
INPUT POWER P
in
(dBm)
O
P
o
(
P
0
2
4
6
8
10
D
I
D
(
f=1270MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
0
10
20
30
40
6
8
DRAIN VOLTAGE V
DD
(V)
10
12
14
16
O
o
(
0
2
4
6
8
10
D
D
(
P
out
f=1240MHz,
V
GG
=5V,
P
in
=200mW
I
DD
-70
-60
-50
-40
-30
-20
1220
1240
1260
1280
1300
1320
FREQUENCY f(MHz)
H
V
DD
=12.5V
V
GG
=5V
P
in
=200mW
3
nd
2
rd
0
10
20
30
40
0
5
10
15
20
25
O
P
o
(
P
0
2
4
6
8
10
D
D
(
f=1300MHz,
V
DD
=12.5V,
V
GG
=5V
P
out
Gp
I
DD
0
10
20
30
40
6
8
DRAIN VOLTAGE V
DD
(V)
10
12
14
16
O
o
(
0
2
4
6
8
10
D
D
(
P
out
I
DD
0
10
20
30
40
6
8
DRAIN VOLTAGE V
DD
(V)
10
12
14
16
O
o
(
0
2
4
6
8
10
D
D
(
P
out
I
DD
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RA18H1213G-101 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
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