參數(shù)資料
        型號: RA13H4452M-E01
        廠商: Mitsubishi Electric Corporation
        英文描述: 440-520MHz 13W 12.5V MOBILE RADIO
        中文描述: 440 - 520MHz的13W 12.5V移動通信
        文件頁數(shù): 1/9頁
        文件大?。?/td> 64K
        代理商: RA13H4452M-E01
        MITSUBISHI RF MOSFET MODULE
        R A 1 3 H 4 4 5 2 M
        440-520MHz
        13W
        12.5V MOBILE RADIO
        RA13H4452M
        MITSUBISHI ELECTRIC
        1/9
        23 Dec 2002
        ELECTROSTATIC SENSITIVE DEVICE
        OBSERVE HANDLING PRECAUTIONS
        DESCRIPTION
        The RA13H4452M is a 13-watt RF MOSFET Amplifier Module
        for 12.5-volt mobile radios that operate in the 440- to 520-MHz
        range.
        The battery can be connected directly to the drain of the
        enhancement-mode MOSFET transistors. Without the gate
        voltage (V
        GG
        =0V), only a small leakage current flows into the drain
        and the RF input signal attenuates up to 60 dB. The output power
        and drain current increase as the gate voltage increases. With a
        gate voltage around 4V (minimum), output power and drain current
        increases substantially. The nominal output power becomes
        available at 4.5V (typical) and 5V (maximum). At V
        GG
        =5V, the
        typical gate current is 1 mA.
        This module is designed for non-linear FM modulation, but may
        also be used for linear modulation by setting the drain quiescent
        current with the gate voltage and controlling the output power with
        the input power.
        FEATURES
        Enhancement-Mode MOSFET Transistors
        (I
        DD
        0 @ V
        DD
        =12.5V, V
        GG
        =0V)
        P
        out
        >13W,
        η
        T
        >40% @ V
        DD
        =12.5V, V
        GG
        =5V, P
        in
        =50mW
        Broadband Frequency Range: 440-520MHz
        Low-Power Control Current I
        GG
        =1mA (typ) at V
        GG
        =5V
        Module Size: 66 x 21 x 9.88 mm
        Linear operation is possible by setting the quiescent drain current
        with the gate voltage and controlling the output power with the
        input power
        ORDERING INFORMATION:
        ORDER NUMBER
        SUPPLY FORM
        RA13H4452M-E01
        RA13H4452M-01
        (Japan - packed without desiccator)
        Antistatic tray,
        10 modules/tray
        BLOCK
        DIAGRAM
        1 RF Input (P
        in
        )
        2 Gate Voltage (V
        GG
        ), Power Control
        3 Drain Voltage (V
        DD
        ), Battery
        4 RF Output (P
        out
        )
        5 RF Ground (Case)
        3
        2
        4
        1
        5
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