- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374566 > RA07N3340M-01 (Mitsubishi Electric Corporation) 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO PDF資料下載
參數(shù)資料
| 型號(hào)： | RA07N3340M-01 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO |
| 中文描述： | 330 - 400MHz的7.5W 9.6V的2級(jí)放大器。便攜式收音機(jī) |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 84K |
| 代理商： | RA07N3340M-01 |
MITSUBISHI RF MOSFET MODULE
R A07N3340M
330-400MHz
7.5W
9.6V 2 Stage Amp. For PORTABLE RADIO
RA07N3340M
MITSUBISHI ELECTRIC
1/9
5 April 2004
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA07N3340M is a 7.5-watt RF MOSFET Amplifier
Module for 9.6-volt portable radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=9.6V, V
GG
=0V)
P
out
>7.5W @ V
DD
=9.6V, V
GG
=3.5V, P
in
=20mW
η
T
>43% @ P
out
=7W (V
GG
control), V
DD
=9.6V, P
in
=20mW
Broadband Frequency Range: 330-400MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
Module Size: 30 x 10 x 5.4 mm
Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA07N3340M-01
Antistatic tray,
25 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
PACKAGE CODE: H46S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA07N4047M | 388 POS 1.27MM PITCH BGA SOCKET |
| RA07N4047M-01 | 30V N-Channel PowerTrench MOSFET |
| RA07N4047M-E01 | MITSUBISHI RF MOSFET MODULE |
| RA07N4452M-01 | 440-520MHz 7.5W 9.6V PORTABLE RADIO |
| RA07N4452M | 440-520MHz 7.5W 9.6V PORTABLE RADIO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA07N3340M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO |
| RA07N4047M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA07N4047M_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA07N4047M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 400-470MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA07N4047M-01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MITSUBISHI RF MOSFET MODULE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。