參數(shù)資料
型號(hào): RA07H3340M-01
廠商: Mitsubishi Electric Corporation
英文描述: MITSUBISHI RF MOSFET MODULE 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO
中文描述: 三菱射頻MOSFET模塊330 - 400MHz的7瓦12.5V便攜式/移動(dòng)通信
文件頁(yè)數(shù): 2/9頁(yè)
文件大小: 62K
代理商: RA07H3340M-01
MITSUBISHI RF POWER MODULE
R A 0 7 H 3 3 4 0 M
RA07H3340M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
V
DD
Drain Voltage
V
GG
<3.5V
13.2
V
V
GG
Gate Voltage
V
DD
<12.5V, P
in
=0mW
4
V
P
in
Input Power
30
mW
P
out
Output Power
f=330-400MHz,
Z
G
=Z
L
=50
10
W
T
case(OP)
Operation Case Temperature Range
-30 to +90
°C
T
stg
Storage Temperature Range
The above parameters are independently guaranteed.
-40 to +110
°C
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
330
400
MHz
P
out
Output Power
V
DD
=12.5V,V
GG
=3.5V, P
in
=20mW
7
W
η
T
Total Efficiency
2
nd
Harmonic
40
%
2f
o
-25
dBc
ρ
in
Input VSWR
4:1
I
GG
Gate Current
P
out
=7W (V
GG
control),
V
DD
=12.5V,
P
in
=20mW
1
mA
Stability
V
DD
=7.2-15V, P
in
=10-30mW, P
out
<8W (V
GG
control),
Load VSWR=4:1
No parasitic oscillation
Load VSWR Tolerance
V
DD
=13.2V, P
in
=20mW, P
out
=7.0W (V
GG
control),
Load VSWR=20:1
No degradation or
destroy
All parameters, conditions, ratings, and limits are subject to change without notice.
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