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參數(shù)資料
| 型號： | R2A20112SP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.2 A POWER FACTOR CONTROLLER, PDSO16 |
| 封裝： | 5.50 X 10.06 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, SOP-16 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 85K |
| 代理商： | R2A20112SP |
R2A20112SP/DD
REJ03D0904-0200 Rev.2.00 Nov 13, 2007
Page 5 of 7
Electrical Characteristics (cont.)
(Ta = 25°C, Vcc = 12 V, RT = 22 k
, OCP = GND, CRAMP = 680 pF, RZCD-GND = 51 k, FB = COMP)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Feedback voltage
Vfb
2.40
2.50
2.60
V
FB-COMP short, RAMP = 0 V
Input bias current
Ifb
–0.5
0
0.5
A
Measured pin: FB
Open loop gain
Av
—
60
—
dB
*1
Upper clamp voltage
Vclamp-comp
8.0
9.1
10.6
V
FB = 2.0 V, COMP: Open
Low voltage
Vl-comp
—
0.1
0.3
V
FB = 3.0 V, COMP: Open
Source current
Isrc-comp
—
–120
—
A
FB = 1.5 V, COMP = 2.5 V
Sink current 1
Isnkcomp1
—
120
—
A
*1
Sink current 2
Isnkcomp2
—
300
—
A
FB = 3.5 V, COMP = 2.5 V
Error
amplifier
Transconductance
gm
150
200
290
s
FB = 2.45 V
2.55 V,
COMP = 2.5 V
RAMP charge current
Ic-ramp
130
150
170
A
RAMP = 0 V to 7 V
RAMP discharge current
Id-ramp
7
16
29
mA
FB = 1 V, COMP = 2 V,
RAMP = 0 V to 1.5 V to 1 V
RAMP
Low voltage
Vl-ramp
—
17
200
mV
FB = 1 V, COMP = 3 V,
RAMP = 0 V to 2.5 V to open
Isink = 100
A
Upper clamp voltage
Vzcdh
5.8
6.4
7.0
V
Isource = –3 mA
Lower clamp voltage
Vzcdl
0.3
0.8
1.3
V
Isink = 3 mA
ZCD low threshold voltage
Vzcd_lo
1.05
1.50
1.75
V
*1
ZCD hysteresis
Hyszcd
180
300
390
mV
*1
Zero
current
detector
Input bias current
Izcd
–1
—
1
A
1.2 V < Vzcd < 5 V
Phase delay
Phase
160
180
200
deg.
*1, *2
Slave
control
On time ratio
Ton-ratio
–5
—
5
%
*1, *2
Restart
Restart time delay
Tstart
210
280
350
s
Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Note:
1. Design spec.
2.
GD-M
GD-S
Tperiod (25
s)
Ton-m
(12.5
s)
Tdelay
Ton-s
Phase =
× 360 [deg.]
Tdelay
Tperiod
Ton-ratio =
× 100 [%]
1 –
Ton-s
Ton-m
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