參數(shù)資料
型號(hào): R1RP0408DGE-2PR
元件分類: SRAM
英文描述: 512K X 8 STANDARD SRAM, 12 ns, PDSO36
封裝: 0.400 INCH, PLASTIC, SOJ-36
文件頁(yè)數(shù): 16/16頁(yè)
文件大?。?/td> 144K
代理商: R1RP0408DGE-2PR
R1RP0408D Series
RJE03C0112-0200
Rev.2.00,
Dec.1.2008,
page 7 of 12
AC Characteristics
(Ta = 0 to +70
°C, VCC = 5.0 V ± 10%, unless otherwise noted.)
Test Conditions
Input pulse levels: 3.0 V/0.0 V
Input rise and fall time: 3 ns
Input and output timing reference levels: 1.5 V
Output load: See figures (Including scope and jig)
DOUT
255
480
5 V
5 pF
Output load (B)
(for tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, and tOW)
Output load (A)
1.5 V
30 pF
DOUT
RL = 50
Zo = 50
Read Cycle
R1RP0408D
10ns version
12ns version
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read cycle time
tRC
10
12
ns
Address access time
tAA
10
12
ns
Chip select access time
tACS
10
12
ns
Output enable to output valid
tOE
5
6
ns
Output hold from address change
tOH
3
3
ns
Chip select to output in low-Z
tCLZ
3
3
ns
1
Output enable to output in low-Z
tOLZ
0
0
ns
1
Chip deselect to output in high-Z
tCHZ
5
6
ns
1
Output disable to output in high-Z
tOHZ
5
6
ns
1
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