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參數(shù)資料
| 型號(hào)： | R0577YS10D |
| 廠商： | WESTCODE SEMICONDUCTORS LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | 1169 A, 1000 V, SCR |
| 封裝： | 101A335, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 235K |
| 代理商： | R0577YS10D |
WESTCODE
Positive development in power electronics
R0577YS10x to R0577YS12x
Data Sheet. Types R0577YS10x to R0577YS12x Issue 1
Page 2 of 12
June, 2001
Characteristics
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIOYS (Note 1)
UNITS
VTM
Maximum peak on-state voltage
-
2.15
ITM=1000A
V
V0
Threshold voltage
-
1.51
V
rs
Slope resistance
-
0.64
m
dv/dt
Critical rate of rise of off-state voltage
200
-
VD=80% VDRM, linear ramp
V/
s
IDRM
Peak off-state current
-
60
Rated VDRM
mA
IRRM
Peak reverse current
-
60
Rated VRRM
mA
VGT
Gate trigger voltage
-
3.0
V
IGT
Gate trigger current
-
200
Tj=25°C
VD=10V, IT=2A
mA
IH
Holding current
-
1000
Tj=25°C
mA
tgt
Gate-controlled turn-on delay time
-
0.6
1.0
tgd
Turn-on time
-
1.2
2.0
VD=67% VDRM, IT=1000A, di/dt=60A/s,
IFG=2A, tr=0.5s, Tj=25°C
Qrr
Recovered charge
-
150
-
C
Qra
Recovered charge, 50% Chord
-
85
100
C
Irr
Reverse recovery current
-
60
-
A
trr
Reverse recovery time
-
2.5
-
ITM=550A, tp=500s, di/dt=40A/s, Vr=50V
s
--
23
ITM=550A, tp=500s, di/dt=40A/s, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/s
tq
Turn-off time (note 2)
20
-
25
ITM=550A, tp=500s, di/dt=40A/s, Vr=50V,
Vdr=80%VDRM, dVdr/dt=200V/s
s
-
0.05
Double side cooled
K/W
Rth(j-hs)
Thermal resistance, junction to heatsink
-
0.10
Single side cooled
K/W
F
Mounting force
5.3
-
10.0
kN
Wt
Weight
-
90
-
g
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required tq (specified with dVdr/dt=200V/s) is represented by an ‘x’ in the device part number. See ordering information
for details of tq codes.
Introduction
The R0577 series of Distributed Gate Thyristors have fast switching characteristics provided by a
regenerative, interdigitated gate. They also exhibit low switching losses. They are therefore suitable for
medium frequency applications.
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