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參數(shù)資料
| 型號： | R-11-100-G-AB |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 封裝： | HERMETIC SEALED, METAL, TO-46, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 895K |
| 代理商： | R-11-100-G-AB |
1
InGaAs PIN Photodiode
R-11-XXX-G-A(B)
LUMNDS008-OCT1504
rev. A.0
LUMINENTOIC.COM
20550 Nordhoff St. Chatsworth, CA 91311 tel: 818.773.9044 fax: 818.576.9486
9F, No 81, Shui Lee Rd. Hsinchu, Taiwan, R.O.C. tel: 886.3.5169222 fax: 886.3.5169213
Parameter
Symbol
Min
Typical
Max
Unit
Test condition
Active area(Dia)
-
40
-
m
-
Detection Range
-
1100
1310
1650
nm
-
Responsivity
R
0.75
0.8
-
A/W
VR = 5V, λ=1310 nm
Dark Current
Idark
-
0.8
nA
VR = 5V
Capacitance
C
-
0.7
-
pF
VR = 5V
Bandwidth
BW
4
-
GHz
VR = 5V
Optical and Electrical Characteristics( Tc=25C )
Features
InGaAs/InP PIN Photodiode
High Responsivity @1310 nm and 1550 nm
Low dark current
Fast pulse response
-40 to 85C operating temperature
Hermetically sealed 3-pin metal case
Active diameter is 40, 55, 75,100 or 300 m
TO-46 package wih intergrated flat window cap
Connectorized receptacle module application
Coaxial pigtail module application
Data and Telecommunication application
Parameter
Symbol
Min
Max
Unit
Reverse Voltage
VR
-
20
V
Forward Current
IF
-
2
mA
Reverse Current
IR
-
1
mA
Operating Temperature
T
opr
-40
+85
C
Storage Temperature
T
stg
-40
+85
C
Absolute Maximum Rating (Tc=25C)
R-11-040-G-A(B)
Parameter
Symbol
Min
Typical
Max
Unit
Test condition
Active area(Dia)
-
55
-
m
-
Detection Range
-
1100
1310
1650
nm
-
Responsivity
R
0.75
0.8
-
A/W
VR = 5V, λ=1310 nm
Dark Current
Idark
-
0.8
nA
VR = 5V
Capacitance
C
-
0.8
-
pF
VR = 5V
Bandwidth
BW
3
-
GHz
VR = 5V
Optical and Electrical Characteristics( Tc=25C )
R-11-055-G-A(B)
相關PDF資料 |
PDF描述 |
|---|---|
| R-11-100-G-A | PHOTO DIODE |
| R-11-075-G-AB | PHOTO DIODE |
| R-11-075A-G-A | PIN PHOTO DIODE |
| R-11-040A-G-A | PIN PHOTO DIODE |
| R-11-055A-G-AB | PIN PHOTO DIODE |
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