參數(shù)資料
型號(hào): QSL9
廠商: Rohm CO.,LTD.
英文描述: General purpose transistor (isolated transistor and diode)
中文描述: 通用晶體管(孤立的晶體管和二極管)
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 83K
代理商: QSL9
QSL9
Transistors
z
Absolute maximum ratings
(Ta=25
°
C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Rev.A
2/4
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
Limits
15
12
6
1.5
3
0.9
150
40 to
+
125
2
1
Unit
V
V
V
A
A
°
C
°
C
1
Single pulse, Pw=1ms.
2
Mounted on a 25mm 25mm
t
0.8mm ceramic substrate.
3
Each terminal mounted on a recommended.
Collector current
Power dissipation
Junction temperature
Range of storage temperature
W/ELEMENT
+
Di2
Average rectified forward current
F
orward current surge peak (60H
Z
,
1
)
Power dissipation
Reverse voltage (DC)
Junction temperature
Range of storage temperature
Mounted on a 25mm 25mm
t
0.8mm ceramic substrate.
z
Tr1 & Di2
Parameter
Parameter
Symbol
V
RM
I
F
P
D
To
Tstg
I
FSM
V
R
Limits
25
700
3
0.7
125
20
40 to
+
125
Unit
V
ma
A
V
°
C
°
C
W/ELEMENT
Peak reverse voltage
+
Symbol
P
D
Limits
0.5
1.25
Unit
W/
TOTAL
W/
TOTAL
Total power dissipation
2
1
1
2
Each terminal mounted on a recommended.
t
0.8mm seramic substrate.
z
Electrical characteristics
(Ta=25
°
C)
Tr1
Parameter
Transition frequency
Collector output capacitance
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
12
15
6
270
Typ.
110
Max.
100
100
200
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
f
T
400
12
MHz
pF
V
CE
=
2V, I
E
=
200mA, f
=
100MHz
I
C
=
1mA
I
C
=
10
μ
A
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
500mA, I
B
=
25mA
V
CE
=
2V, I
C
=
200mA
Cob
Di2
Parameter
Min.
Typ.
9
Max.
490
200
Unit
mV
μ
A
ns
Conditions
I
F
=700mA
V
R
=20V
I
F
=I
R
=100mA,I
rr
=0.1I
R
Symbol
V
F
I
R
trr
Forward voltage
Reverse current
Reverse recovery time
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