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參數(shù)資料
| 型號： | QRB1133 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 光電傳感器 |
| 英文描述： | REFLECTIVE OBJECT SENSORS |
| 中文描述： | POSITION, LINEAR SENSOR-DIFFUSE, 3.81-3.81mm, 0.20mA, RECTANGULAR, THROUGH HOLE MOUNT |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 47K |
| 代理商： | QRB1133 |
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
= 25°C)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
EMITTER
I
F
= 40 mA
V
F
—
—
1.7
V
Forward Voltage
Reverse Current
V
R
= 2.0 V
I
F
= 20 mA
I
R
!
PE
—
—
100
μA
Peak Emission Wavelength
—
940
—
nm
SENSOR
I
C
= 1 mA
BV
CEO
30
—
—
V
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
I
E
= 0.1 mA
V
CE
= 10 V, I
F
= 0 mA
BV
ECO
I
CEO
5
—
—
V
Collector-Emitter Dark Current
—
—
100
nA
COUPLED
On-state Collector Current
I
F
= 40 mA, V
CE
= 5 V
D = .150”
(5,6)
I
C(ON)
mA
QRB1133
0.20
—
—
QRB1134
0.60
—
Collector-Emitter
I
F
= 20 mA, I
C
= 0.5 mA
V
CE (SAT)
—
—
0.4
V
Saturation Voltage
Rise Time
V
CE
= 5 V, R
L
= 100
"
I
C(ON)
= 5 mA
I
F
= 40 mA, V
CE
= 5 V
(7)
t
r
t
f
—
8
—
μs
Fall Time
—
8
—
Cross Talk
I
CX
—
—
1.00
μA
www.fairchildsemi.com
2 OF 4
7/02/01
DS300351
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
Rating
-40 to +85
-40 to +85
240 for 5 sec
260 for 10 sec
Units
°C
°C
°C
°C
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(2,3,4)
Soldering Temperature (Flow)
(2,3)
EMITTER
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
SENSOR
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
(1)
I
F
V
R
P
D
50
5
100
mA
V
mW
V
CEO
V
ECO
I
C
P
D
30
50
20
100
V
V
mA
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron
1/16”
(1.6mm) minimum from housing.
5. D is the distance from the assembly face to the reflective surface.
6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.
7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.
PHOTOTRANSISTOR
REFLECTIVE OBJECT SENSORS
QRB1133
QRB1134
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