參數(shù)資料
型號: QM75E3Y-H
廠商: Mitsubishi Electric Corporation
英文描述: HIGH POWER SWITCHING USE INSULATED TYPE
中文描述: 大功率開關(guān)使用絕緣型
文件頁數(shù): 4/6頁
文件大小: 100K
代理商: QM75E3Y-H
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
C
V
V
C
S
t
o
,
s
,
f
μ
s
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
C
I
C
C
I
C
D
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
10
0
1
10
2
10
3
10
1
10
0
10
–1
10
7
–2
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
7
0
10
1
10
7
5
4
3
2
0
10
7
5
4
3
3 4 5
2 3 4 5 7
1
10
2
–1
10
2
2
t
f
T
j
=25°C
T
j
=125°C
I
C
=75A
I
B1
=1.5A
V
CC
=300V
t
s
160
00
200
400
600
800
120
80
40
T
j
=125°C
I
B2
=–2A
–5A
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
100μs
t
w
=50μs
1ms
DC
10m
1
10
7
5
4
3
2
0
10
7
5
4
3
2
2
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
I
B1
=–I
B2
=1.5A
T
j
=25°C
T
j
=125°C
V
CC
=300V
t
s
t
on
t
f
7
5
3
2
7
5
3
2
5
3
2
0
5
4
4
4
4
3
2
1
T
j
=25°C
T
j
=125°C
I
C
=30A
I
C
=75A
I
C
=50A
I
C
=100A
NON-REPETITIVE
T
C
=25°C
COLLECTOR
DISSIPATION
SECOND BREAK-
DOWN AREA
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