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參數(shù)資料
| 型號： | QM50TB-24B |
| 元件分類： | 功率晶體管 |
| 英文描述： | 50 A, 6 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 86K |
| 代理商： | QM50TB-24B |
Feb.1999
0
10
–3
10
–2
10
7
–1
10
0
10
10
2
10
2
10
1
10
0
7
5
3
2
10
0
10
7
1
10
2
10
10
7
5
4
3
2
–1
10
2 3 4 5 7
0
10
2 3 4 5 7
1
10
0
10
7
5
4
3
3
2
T
j
=25°C
T
j
=125°C
t
s
t
f
V
CC
=600V
I
C
=50A
I
B1
=100mA
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
0.4
0.8
1.2
1.6
2.0
T
j
=25°C
T
j
=125°C
120
40
00
400
80
800
1200
200
600
1000
1400
100
60
20
I
B2
=–1A
T
j
=125°C
7
5
3
2
7
5
3
2
5
3
2
7
5
3
2
T
=25°C
NON–REPETITIVE
7
5
3
2
2
2
200μ
S
50μ
S
100μ
S
DC
1m
S
7
5
3
2
7
5
3
2
5
3
2
0.5
0.4
0.3
0.1
0
2 3 5 7
3
2
57
100
90
60
50
40
20
00
160
20
40
60
80 100 120 140
80
10
70
30
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
0.2
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM50TB-24B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
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參數(shù)描述 |
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