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參數(shù)資料
| 型號(hào)： | QM50E2Y-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 中功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 89K |
| 代理商： | QM50E2Y-H |
Feb.1999
PERFORMANCE CURVES (Diode part (D1))
MITSUBISHI TRANSISTOR MODULES
QM50E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
10
0.5
Z
t
°
C
TIME (s)
FORWARD CHARACTERISTICS
(TYPICAL)
MAXIMUM SURGE CURRENT
F
I
F
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD VOLTAGE
V
F
(A)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
1
10
10
3
2
7
5
3
2
2.0
FORWARD CURRENT
I
F
(A)
TIME (s)
I
r
r
μ
c
S
I
F
Z
t
°
C
t
r
μ
s
0
–3
10
–2
10
7
–1
10
0
10
–1
10
3
10
2
10
1
10
0
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
10
10
2
10
1
10
0
0
10
0
–1
10
–2
10
7
–3
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
100
200
300
400
500
2
10
10
7
5
4
3
2
0.4
10
7
5
4
3
2
0.8
1.2
1.6
2.0
2.4
T
j
=25°C
T
j
=125°C
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=–I
B2
=1A
I
rr
Q
rr
t
rr
7
5
3
2
7
5
3
2
5
3
2
0
0.4
4
4
4
4
4
5
0.8
1.2
1.6
7
7
5
3
2
7
5
3
2
5
3
2
0.1
0.2
0.3
0.4
0
3
2
7
5
3
2
4
4
4
4
4
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM50E2Y | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E2Y2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E3Y2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50HA-HB | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50HA-H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM50E2Y-HD | 制造商:Mitsubishi Electric 功能描述: |
| QM50E3Y2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 50A I(C) |
| QM50E3Y-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM50E3Y-HD | 制造商:Mitsubishi Electric 功能描述: |
| QM50HA-H | 制造商:n/a 功能描述:Darlington Module |
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