- 您現(xiàn)在的位置：買賣IC網 > PDF目錄358314 > QM30TB-24 30 A, 6 CHANNEL, NPN, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | QM30TB-24 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 A, 6 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 75K |
| 代理商： | QM30TB-24 |
Feb.1999
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25
°
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
Ratings
1200
1200
1200
7
30
30
310
2
300
–40~+150
–40~+125
2500
1.47~1.96
15~20
500
ABSOLUTE MAXIMUM RATINGS
(Tj=25
°
C, unless otherwise noted)
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Unit
V
V
V
V
A
A
W
A
A
°
C
°
C
V
N·m
kg·cm
g
MITSUBISHI TRANSISTOR MODULES
QM30TB-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS
(Tj=25
°
C, unless otherwise noted)
Unit
mA
mA
mA
V
V
V
—
μ
s
μ
s
μ
s
°
C/W
°
C/W
°
C/W
Limits
Min.
—
—
—
—
—
—
75
—
—
—
—
—
—
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
V
CE
=1200V, V
EB
=2V
V
CB
=1200V, Emitter open
V
EB
=7V
I
C
=30A, I
B
=0.6A
–I
C
=30A (diode forward voltage)
I
C
=30A, V
CE
=5V
V
CC
=600V, I
C
=30A, I
B1
=–I
B2
=0.6A
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
3.0
3.5
1.8
—
2.5
15
3.0
0.4
1.5
0.25
相關PDF資料 |
PDF描述 |
|---|---|
| QM400HA-24B | 400 A, NPN, Si, POWER TRANSISTOR |
| QM40DY-3H | 40 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| QM200DY-HK | 200 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| QM50DY-24 | 50 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| QM50E3Y-H | 50 A, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| QM30TB24B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CEO | 30A I(C) |
| QM30TB-24B | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30TB2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 30A I(C) |
| QM30TB-2H | 制造商:n/a 功能描述:Darlington Module |
| QM30TB2HB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 30A I(C) |
發(fā)布緊急采購，3分鐘左右您將得到回復。