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參數(shù)資料
| 型號： | QM30HA-H |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | CAP CER 10000PF 100V X7R 10%0805 |
| 中文描述： | 中功率開關使用絕緣型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | QM30HA-H |
Feb.1999
0
10
–1
10
–2
10
–3
10
0
10
1
10
2
10
0
10
10
2
10
3
10
–1
10
0
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
1
10
7
5
4
3
2
10
7
5
4
3
10
3 4 5 7
0
10
2 3 4 5 7
1
10
3
2
–1
2
t
f
T
j
=25°C
T
j
=125°C
I
C
=30A
I
B1
=0.6A
V
CC
=300V
t
s
70
00
700
10
20
30
40
50
60
600
500
400
300
200
100
T
j
=125°C
I
B2
=–1A
–3A
–5A
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
C
=25°C
NON–REPETITIVE
10s
50s
1m
DC
7
5
3
2
7
5
3
2
7
5
3
2
0.1
0.2
0.3
0.4
0.5
0
7
5
3
2
7
5
3
2
4
4
4
4
4
2
10
10
7
5
4
3
2
0.4
10
7
5
4
3
2
0.8
1.2
1.6
2.0
2.4
T
j
=25°C
T
j
=125°C
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM30HA-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相關PDF資料 |
PDF描述 |
|---|---|
| QM30HC-2H | INDUCTION HEATER USE NON-INSULATED TYPE |
| QM30HC2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.6KV V(BR)CEO | 30A I(C) |
| QM30HQ24 | TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CEO | 30A I(C) |
| QM30HY2H | TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1KV V(BR)CEO | 30A I(C) |
| QM30HQ-24 | DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| QM30HA-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30HC2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.6KV V(BR)CEO | 30A I(C) |
| QM30HC-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INDUCTION HEATER USE NON-INSULATED TYPE |
| QM30HQ24 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CEO | 30A I(C) |
| QM30HQ-24 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:DRIVE USE FOR HIGH POWER TRANSISTOR INSULATED TYPE |
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