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參數(shù)資料
| 型號： | QM30E3Y-H |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 A, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 74K |
| 代理商： | QM30E3Y-H |
Feb.1999
2
7
5
3
2
10
1
7
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2
10
0
7
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2
10
1
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10
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2
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1
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7
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–1
10
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7
–3
10
10
7
0
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2
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10
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10
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0
200
400
600
800
1000
7
5
3
2
7
5
3
2
7
5
3
2
0.6
1.0
1.4
1.8
2.2
T
j
=25°C
7
5
3
2
7
5
3
2
5
3
2
0.4
0.8
1.2
1.6
2.0
0
5
3
2
5
3
2
4
4
4
4
4
7
5
3
2
7
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3
2
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T
j
=25°C
T
j
=150°C
V
R
=300V
di/dt=–60A/μs
I
rr
Q
rr
t
rr
7
5
3
2
7
5
3
2
7
5
3
2
4
4
4
T
j
=25°C
T
j
=150°C
V
R
=300V
I
F
=30A
I
rr
Q
rr
t
rr
I
r
r
μ
C
S
I
F
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
MAXIMUM SURGE CURRENT
REVERSE RECOVERY CHARACTERISTICS
(VS. I
F
) (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
di/dt (A/
μ
s)
I
r
r
μ
C
MITSUBISHI TRANSISTOR MODULES
QM30E2Y/E3Y-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
F
I
F
FORWARD VOLTAGE
V
F
(V)
PERFORMANCE CURVES (Diode part (D2))
Z
t
°
C
TRANSIECHARACTERISTIC
TIME (s)
t
r
μ
s
t
r
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM30E3Y-2H | 30 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR |
| QM30TB-24 | 30 A, 6 CHANNEL, NPN, Si, POWER TRANSISTOR |
| QM400HA-24B | 400 A, NPN, Si, POWER TRANSISTOR |
| QM40DY-3H | 40 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| QM200DY-HK | 200 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM30HA-H | 制造商:n/a 功能描述:Darlington Module |
| QM30HA-HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM30HC2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.6KV V(BR)CEO | 30A I(C) |
| QM30HC-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:INDUCTION HEATER USE NON-INSULATED TYPE |
| QM30HQ24 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CEO | 30A I(C) |
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