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參數(shù)資料
| 型號： | QM300HA-2HB |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 73K |
| 代理商： | QM300HA-2HB |
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
1
10
10
0.08
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM300HA-2HB
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
0
10
0
–1
10
–2
10
–3
10
3
10
2
10
1
10
0
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
–1
10
10
0
7
5
3
2
10
1
7
5
3
2
10
2
7
5
3
2
10
600
00
200
1200
300
1000
500
400
200
100
I
B2
=–6A
400
600
800
T
j
=125°C
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
C
=300A
I
B1
=0.6A
t
s
t
f
7
5
3
2
7
5
3
2
7
5
3
2
0.06
0.05
0.02
0
2 3 457
0.03
0.07
0.01
0.04
3
10
2
10
7
5
4
3
2
10
7
5
4
3
2
2.2
0.6
1.0
1.4
1.8
T
j
=25°C
T
j
=125°C
0.2
100
90
60
50
40
20
00
160
20
40
60
80 100 120 140
80
10
70
30
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25°C
NON-REPETITIVE
100μ
S
DC
1m
S
2μ
S
50μ
S
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
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參數(shù)描述 |
|---|---|
| QM300HA-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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| QM300HC-M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE NON-INSULATED TYPE |
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