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參數(shù)資料
| 型號： | QM300DY-24B |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED TYPE |
| 中文描述： | 大功率開關(guān)使用絕緣型 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 85K |
| 代理商： | QM300DY-24B |
Feb.1999
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
T
j
=25°C
T
j
=125°C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
7
5
3
2
10
10
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM300DY-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
–3
10
–1
10
–2
10
7
–1
10
10
0
10
1
10
2
10
100
80
60
40
20
00
20
60
100 120
160
40
80
140
10
30
50
70
90
600
100
00
400
800
1200
200
600
1000
300
400
200
500
T
j
=125°C
I
B2
=–6A
7
5
3
2
7
5
3
2
7
5
3
2
0
2 3 4 5 7
2 3 4 5 7
2
10
1
10
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
C
=300A
I
B1
=0.6A
t
s
t
f
3
10
7
5
4
3
2
2
10
7
5
4
3
2
0.2
2.2
1.8
1.4
1.0
0.6
10
7
5
3
2
7
5
3
2
5
3
2
0.08
0
1
0
10
0.07
0.06
0.05
0.04
0.03
0.02
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
7
5
3
2
0
T
C
=25°C
NON-REPETITIVE
2
10
3
10
1
10
0
10
3
10
2
10
10
10
1m
50μs
100μs
DC
200μs
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM300DY-2HB | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300DY-2H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300DY24 | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 300A I(C) |
| QM300DY24B | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 300A I(C) |
| QM300DY2H | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 300A I(C) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM300DY2H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 300A I(C) |
| QM300DY-2H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300DY2HB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 300A I(C) |
| QM300DY-2HB | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM300HA-2 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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