參數(shù)資料
型號(hào): QM20TD-HB
元件分類: 功率晶體管
英文描述: 20 A, 6 CHANNEL, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 3/5頁
文件大小: 76K
代理商: QM20TD-HB
Feb.1999
–1
10
10
7
5
4
3
2
–2
10
7
5
4
3
2
1.0
1.4
1.8
2.2
2.6
3.0
V
CE
=2.0V
T
j
=25°C
1
10
7
5
4
3
2
10
7
5
4
3
2
–1
10
0
10
2 3 4 5 7
1
10
2 3 4 5 7
2
10
V
BE(sat)
V
CE(sat)
T
j
=25°C
T
j
=125°C
I
B
=80mA
50
40
30
20
10
00
1
2
3
4
5
T
j
=25°C
I
B
=20mA
I
B
=40mA
I
B
=80mA
I
B
=200mA
I
B
=400mA
3
10
7
5
4
3
2
2
10
7
5
4
3
2
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
2
V
CE
=2.0V
V
CE
=5.0V
T
j
=25°C
T
j
=125°C
10
–1
10
7
5
4
3
2
0
10
1
2
3
4
5
7
5
4
3
–2
2
T
j
=25°C
T
j
=125°C
I
C
=15A
I
C
=20A
I
C
=25A
1
10
7
5
4
3
2
10
7
5
4
3
10
0
2 3 4 5 7
1
10
2 3 4 5 7
2
10
3
2
T
j
=25°C
T
j
=125°C
I
B1
=120mA
I
B2
=–400mA
V
CC
=300V
t
s
t
on
t
f
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
C
I
C
D
h
F
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(A)
B
I
B
C
V
V
C
S
V
C
,
B
S
t
o
,
s
,
f
μ
s
COLLECTOR CURRENT
I
C
(A)
BASE-EMITTER VOLTAGE
V
BE
(V)
BASE CURRENT
I
B
(A)
COLLECTOR CURRENT
I
C
(A)
MITSUBISHI TRANSISTOR MODULES
QM20TD-HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
相關(guān)PDF資料
PDF描述
QM300HA-24B 300 A, NPN, Si, POWER TRANSISTOR
QM30E2Y-H 30 A, NPN, Si, POWER TRANSISTOR
QM30E3Y-H 30 A, NPN, Si, POWER TRANSISTOR
QM30E3Y-2H 30 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
QM30TB-24 30 A, 6 CHANNEL, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM20TG9B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 20A I(C)
QM20TG-9B 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE
QM2409K 制造商:UBIQ 功能描述:
QM2410K 制造商:UBIQ 功能描述:
QM2421K 制造商:UBIQ 功能描述: