參數(shù)資料
型號: QM15TB-2H
廠商: Mitsubishi Electric Corporation
英文描述: MEDIUM POWER SWITCHING USE INSULATED TYPE
中文描述: 中功率開關(guān)使用絕緣型
文件頁數(shù): 5/5頁
文件大?。?/td> 78K
代理商: QM15TB-2H
Feb.1999
0
10
–1
10
–3
10
–2
10
0
10
1
10
1
10
0
10
–1
10
2
10
2
10
10
7
5
4
3
2
10
7
5
4
3
2
0
40
80
120
160
200
180
20
60
100
140
2
10
7
5
4
3
2
10
7
5
4
3
2
0
10
10
0
2 3 4 5 7
1
10
2 3 4 5 7
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
B1
=–I
B2
=0.3A
I
rr
Q
rr
t
rr
5
7
5
3
2
7
5
3
2
7
5
3
2
0.4
0.8
1.2
1.6
2.0
0
3
2
7
5
3
2
4
4
4
4
4
0.6
1.0
1.4
1.8
0.2
I
r
r
μ
c
S
C
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT
I
F
(A)
TIME (s)
MITSUBISHI TRANSISTOR MODULES
QM15TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
t
r
μ
s
相關(guān)PDF資料
PDF描述
QM15TB2H TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C)
QM15TB2HB TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C)
QM15TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE
QM15TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE
QM15TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QM15TB2HB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 15A I(C)
QM15TB-2HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE
QM15TD-H 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE
QM15TD-HB 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MEDIUM POWER SWITCHING USE INSULATED TYPE
QM15TG9B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 15A I(C)