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參數(shù)資料
| 型號： | QM150DY-24BK |
| 元件分類： | 功率晶體管 |
| 英文描述： | 150 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 83K |
| 代理商： | QM150DY-24BK |
Feb.1999
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
0.4
10
0
10
1
10
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10
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–3
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3
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2
10
2
7
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1
7
5
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10
0
10
10
0
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10
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40
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00
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100 120
160
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80
140
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90
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10
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5
4
3
3 4 5
2 3 4 5 7
2
10
3
2
2 3
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
C
=150A
I
B1
=300mA
t
s
t
f
7
5
3
2
7
5
3
2
7
5
3
2
0.02
0.16
0
7
5
3
2
2
0.04
0.06
0.08
0.10
0.12
0.14
3
320
00
200 400 600
1400
40
800 1000 1200
80
120
160
200
240
280
T
j
=125°C
–I
B2
=3A
7
5
3
2
7
5
3
2
7
5
3
2
T
C
=25°C
NON–REPETITIVE
100μs
50μs
200μs
1ms
DC
0.8
1.2
1.6
2.0
2.4
T
j
=25°C
T
j
=125°C
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
S
t
s
,
f
μ
s
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
BASE REVERSE CURRENT
–I
B2
(A)
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
CASE TEMPERATURE
T
C
(
°
C)
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
TIME (s)
C
I
C
C
I
C
D
C
–
C
MITSUBISHI TRANSISTOR MODULES
QM150DY-24BK
HIGH POWER SWITCHING USE
INSULATED TYPE
Z
t
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM150DY-24K | 150 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| QM150HY-2H | 150 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR |
| QM20TD-HB | 20 A, 6 CHANNEL, NPN, Si, POWER TRANSISTOR |
| QM300HA-24B | 300 A, NPN, Si, POWER TRANSISTOR |
| QM30E2Y-H | 30 A, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM150DY24K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 150A I(C) |
| QM150DY-24K | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM150DY-2H | 制造商:n/a 功能描述:Power Module |
| QM150DY2HBK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 150A I(C) |
| QM150DY-2HBK | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
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