| 型號: | QM100DY2HBK |
| 英文描述: | TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.2KV V(BR)CEO | 100A I(C) |
| 中文描述: | 晶體管|晶體管電源模塊|半橋|達(dá)林頓| 1.2KV五(巴西)總裁| 100號A一(c) |
| 文件頁數(shù): | 1/5頁 |
| 文件大小: | 236K |
| 代理商: | QM100DY2HBK |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| QM100TX1-HB | 240 x 128 pixel format, STN Blue |
| QM100TX1-H | 240 x 128 pixel format, LED or EL Backlight |
| QM100HY-H | HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100HY-2H | MEDIUM POWER SWITCHING USE INSULATED TYPE |
| QM100HC-M | HIGH POWER SWITCHING USE NON-INSULATED TYPE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QM100DY-2HBK | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY2HK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1KV V(BR)CEO | 100A I(C) |
| QM100DY-2HK | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY-H | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING USE INSULATED TYPE |
| QM100DY-H1K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT POWER MODULE | DARLINGTON | 100A I(C) |