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參數(shù)資料
| 型號(hào)： | QJD0240002 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Dual Power MOSFET Module (400 Amperes/200 Volts) |
| 中文描述： | 400 A, 200 V, 0.006 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-7 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 74K |
| 代理商： | QJD0240002 |
QJD0240002
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
400 Amperes/200 Volts
Maximum Ratings, Tj=25
°
C unless otherwise specified
Ratings
Dual Power MOSFET Module
Preliminary
Page 2
7/10/2002
Symbol
QJD0240002
Units
Drain-source voltage, V
GS
=0V
Gate-source voltage
Drain Current at Tc = 25
°
C
Drain Current at Tc = 100
°
C
Max Operating Junction Temperature
Storage Temperature
Mounting Torque, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
V Isolation
V
DSS
V
GSS
I
D
I
D
T
j
T
stg
-
-
-
V
RMS
200
±
20
400
252
150
Volts
Volts
Amperes
Amperes
°
C
°
C
In-lb
In-lb
Grams
Volts
-40 to 125
40
40
400
2000
Static Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Drain-source breakdown voltage
V
(BR)DSS
I
D
=1mA, V
GS
=0V
200
-
-
Volts
Drain leakage current
I
DSS
V
DS
=200V, V
GS
=0V
-
-
40
μ
A
Drain leakage current at Tc = 125
°
C
I
DSS
V
DS
=200V, V
GS
=0V
-
-
400
μ
A
Gate leakage current
I
GSS
V
GS
=
±
20V,V
DS
=0V
-
-
±
400
nA
Gate-source threshold voltage
V
GS(th)
I
D
=1mA, V
DS
=10V
3.0
4.0
5.0
Volts
Drain-source on state resistance
R
DS(ON)
I
D
=200A, V
GS
=10V
-
5.5
6.0
m
Drain-source on-state voltage
V
DS (ON)
I
D
=200A, V
GS
=10V
-
1.1
1.2
Volts
Forward On Voltage MOS Diode
V
SD
I
SD
=400A, V
GS
=0V
-
-
1.6
Volts
Dynamic Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn- off Delay Time
Fall Time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
-
-
-
31600
6000
1840
TBD
TBD
TBD
TBD
-
-
-
-
-
-
-
pF
pF
pF
ns
ns
ns
ns
V
DS
=25V
V
GS
=0V
f=1MHz
V
DD
=100V
I
D
=200A
V
GS
=10V
R
G
=4.7
Reverse Recovery Time MOS Diode
t
rr
-
225
-
ns
Reverse Recovery Charge MOS Diode
Q
rr
-
5.4
-
μC
Reverse Recovery Current MOS Diode
I
RRM
I
SD
=400A
di/dt=400A/μs
V
DD
=160V
Tj=150
°
C
-
48
-
Amperes
Thermal Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Channel to Case
Contact Thermal Resistance
(Thermal Grease Applied)
R
θ
(ch-c)
Per Mosfet
-
0.08
TBD
°
C/W
R
θ
CF
Per Module
-
0.020
-
°
C/W
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