參數(shù)資料
型號(hào)： QIQ1245001
廠商： POWEREX INC
元件分類： IGBT 晶體管
英文描述： Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode
中文描述： 450 A, 1200 V, N-CHANNEL IGBT
文件頁數(shù)： 2/2頁
文件大?。?/td> 234K
代理商： QIQ1245001
QIQ1245001
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Low side Chopper IGBT Module
1200V 450A IGBT / 1200V 750A Fast Diode
Preliminary
Page 2
4/22/2002
Maximum Ratings, Tj=25
°
C unless otherwise specified
Ratings
Symbol
QIQ1245001
Units
Collector- Emitter Voltage (G-E Short)
Gate- Emitter Voltage (C-E Short)
Collector Current
Peak Collector Current (Tj<= 150°C)
Diode Forward Current
Power Dissipation
Junction Temperature
Storage Temperature
Mounting
Torque
, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*
Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Static Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
V
CES
V
GES
I
C
I
CM
I
FM
P
d
T
j
T
stg
-
-
-
V
RMS
1200
±
20
450
900*
750
TBD
-40 to 150
-40 to 125
40
40
580
2500
Volts
Volts
Amperes
Amperes
Amperes
Watts
°
C
°
C
In-lb
In-lb
Grams
Volts
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
Gate Leakage Current
I
CES
I
GES
V
CE
=V
CES
V
GE
=0V
V
GE
=V
GES
V
CE
=0V
-
-
-
-
1.0
60
mA
μ
A
Volts
Volts
Volts
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V
GE(th)
V
CE(sat)
I
C
=45mA, V
CE
=10V
I
C
=450A, V
GE
=15V
I
C
=450A, V
GE
=15V,
T
j
=125
°
C
V
CC
=600V,
I
C
=450A, V
GS
=15V
I
F
=750A
5.0
-
-
6.0
1.8
1.9
7.0
2.4
-
Total Gate Charge
Q
G
-
4950
-
nC
Diode Forward Voltage
V
FM
-
-
3.2
Volts
Dynamic Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn-off Delay Time
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
trr
Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
180
7.6
4.5
TBD
TBD
TBD
TBD
250
-
nF
nF
nF
ns
ns
ns
ns
ns
μ
C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=450A
V
GE1
=V
GE2
=15V
R
G
=1.0
I
F
=750A
44.0
Thermal and Mechanical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
θ
JC
Per IGBT
-
0.075
TBD
°
C/W
°
C/W
°
C/W
Thermal Resistance, Junction to Case
R
θ
JC
Per Diode
-
0.052
TBD
Contact Thermal Resistance
R
θ
CF
Per Module
-
0.01
-
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PDF描述
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QIS1260015 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:Single IGBTMOD NX-Series Module 600 Amperes/1200 Volts
QIS4506001 功能描述:IGBT MOD SINGLE 4500V 60A RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
QIS4506002 功能描述:IGBT MOD SINGLE 4500V 60A RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
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