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參數(shù)資料
| 型號： | QID0630006 |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Dual IGBT H-Series Hermetic Module (300 Amperes/600 Volts) |
| 中文描述： | 300 A, 600 V, N-CHANNEL IGBT |
| 封裝： | HERMETIC SEALED MODULE-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 89K |
| 代理商： | QID0630006 |
QID0630006
Dual IGBT H-Series
Hermetic Module
300 Amperes/600 Volts
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
Maximum Ratings, Tj=25
°
C unless otherwise specified
Ratings
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
V Isolation
Static Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Page 2
4/11/2001
Symbol
V
CES
V
GES
I
C
I
CM
I
FM
I
FM
P
d
V
RMS
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Volts
600
±
20
300
600*
300
600*
1100
2500
Test
Conditions
V
CE
=V
CES
V
CE
=0V
I
C
=30mA,
V
CE
=10V
I
C
=300A,
V
GE
=15V
I
C
=300A,
V
GE
=15V,
T
j
=150
°
C
V
CC
=300V,
I
C
=300A,
V
GS
=15V
I
E
=300A,
V
GS
=0V
Min
Typ
Max
Units
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
I
CES
I
GES
1.0
0.5
7.5
mA
μ
A
Volts
V
GE(th)
4.5
6.0
Collector-Emitter Saturation Voltage
V
CE(sat)
2.1
2.8
Volts
V
CE(sat)
2.15
Volts
Total Gate Charge
Q
G
900
nC
Diode Forward Voltage
V
FM
2.8
Volts
Dynamic Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=300A
V
GE1
=V
GE2
=15
V
R
G
=2.1
I
E
=300A
di
E
/dt=-
600A/
μ
S
Min
Typ
Max
Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn off delay time
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
30
10.5
6
350
600
350
nF
nF
nF
nS
nS
nS
Fall Time
Diode Reverse Recovery Time
Diode reverse Recovery Charge
t
f
trr
Qrr
300
150
nS
nS
μ
C
0.81
Thermal and Mechanical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test
Conditions
Per IGBT
Per Diode
Min
Typ
Max
Units
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JC
0.11
0.24
°
C/W
°
C/W
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