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參數(shù)資料
| 型號： | QIC0620003 |
| 廠商： | POWEREX INC |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Dual IGBT Common Emitter Module (200 Amp/600 Volts) |
| 中文描述： | 200 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 33K |
| 代理商： | QIC0620003 |
Preliminary
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBT Common Emitter Module
200 Amp/600 Volts
QIC0620003
200 Amp/600 Volts
Maximum Ratings, Tj=25
°
C unless otherwise specified
Ratings
Symbol
QIC0620003
Units
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Junction Temperature
Storage Temperature
Mounting Torque, M6 Terminal Screws
Mounting Torque, M6 Mounting Screws
Module Weight (Typical)
V Isolation
*
Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
V
CES
V
GES
I
C
I
CM
I
F
I
FM
T
j
T
stg
-
-
-
V
RMS
600
±
20
200
400*
50
500
Volts
Volts
Amperes
Amperes
Amperes
Amperes
°
C
°
C
In-lb
In-lb
Grams
Volts
-40 to 150
-40 to 125
40
40
200
2500
Static Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector Cutoff Current
Gate Leakage Current
I
CES
I
GES
V
CE
=V
CES
V
GE
=0V
V
GE
=V
GES
V
CE
=0V
-
-
-
-
1.0
0.5
mA
μ
A
Volts
Volts
Volts
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V
GE(th)
V
CE(sat)
I
C
=20mA, V
CE
=10V
I
C
=200A, V
GE
=15V
I
C
=200A, V
GE
=15V,
T
j
=150
°
C
V
CC
=300V,
I
C
=200A, V
GS
=15V
I
F
=50A, V
GS
=0V
4.5
-
-
6.0
2.1
2.15
7.5
2.8
-
Total Gate Charge
Q
G
-
600
-
nC
Diode Forward Voltage
V
FM
-
-
2.8
Volts
Dynamic Electrical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn- off Delay Time
Fall Time
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
trr
Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
7
4
200
550
300
300
110
-
nF
nF
ns
ns
ns
ns
ns
ns
μ
C
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=200A
V
GE1
=V
GE2
=15V
R
G
=3.1
I
F
=50A
di
F
/dt=-100A/
μ
S
0.37
Thermal and Mechanical Characteristics, Tj=25
°
C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JC
Per IGBT
-
0.14
TBD
°
C/W
°
C/W
Thermal Resistance, Junction to Case
Contact Thermal Resistance, Thermal Grease
Applied
Per Diode
-
0.70
TBD
R
θ
CF
Per Module
-
-
0.075
°
C/W
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