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參數(shù)資料
| 型號： | QEE273 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 紅外LED |
| 英文描述： | 1.52 mm, 1 ELEMENT, INFRARED LED, 850 nm |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 199K |
| 代理商： | QEE273 |
2009 Fairchild Semiconductor Corporation
QEE273 Rev. 1.0.0
www.fairchildsemi.com
2
Q
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
(T
A
= 25°C unless otherwise specified)
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
(T
A
= 25°C)
Rating
Units
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
Operating Temperature
-40 to +100
°C
Storage Temperature
-40 to +100
°C
Soldering Temperature (Iron)
(2,3,4)
240 for 5 sec
°C
Soldering Temperature (Flow)
(2,3)
260 for 10 sec
°C
Continuous Forward Current
50
mA
R
Reverse Voltage
5
V
P
D
Power Dissipation
(1)
100
mW
Symbol
λ
PE
TC
Θ
V
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Peak Emission Wavelength
I
F
= 20mA
850
nm
λ
/2
Temperature Coefficient
0.2
nm
/
°C
2
1
Emission Angle
I
F
= 100mA
30
°
F
Forward Voltage
I
F
= 100mA, tp = 20ms
1.8
V
TC
VF
Temperature Coefficient
-1
mV
/
°C
I
R
I
E
Reverse Current
V
R
= 100mA, tp = 20ms
= 5V
10
μA
Radiant Intensity
I
F
18
27
36
mW/sr
TC
IE
Temperature Coefficient
-0.33
%
/
°C
t
r
Rise Time
I
F
= 100mA
11
ns
t
f
Fall Time
12
ns
C
j
Junction Capacitance
V
R
= 0V
22
pF
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