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參數(shù)資料
| 型號： | QEB373 |
| 廠商： | QT OPTOELECTRONICS |
| 元件分類： | 紅外LED |
| 英文描述： | 1.9 mm, 1 ELEMENT, INFRARED LED, 880 nm |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 99K |
| 代理商： | QEB373 |
1 of 3
100008A
NOTES
1. Derate power dissipation linearly
1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Soldering iron tip at 1/16” (1.6mm)
from housing
QEB373
SUBMINIATURE PLASTIC INFRARED
EMITTING DIODE
Parameter
Symbol
Rating
Units
Operating Temperature
TOPR
-40 to +100
°C
Storage Temperature
TSTG
-40 to +100
°C
Soldering Temperature (Iron)(2,3,4)
TSOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)(2,3)
TSOL-F
260 for 10 sec
°C
Continuous Forward Current
IF
50
mA
Reverse Voltage
VR
5V
Power Dissipation(1)
PD
100
mW
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNITS
Peak Emission Wavelength
IF = 100mA
l
P
—
880
—
nm
Emission Angle
IF = 100mA
U
—
±12
—
Deg.
Forward Voltage
IF = 100mA, tP = 20ms
VF
—
1.7
V
Reverse Current
VR = 5V
IR
—
100
A
Radiant Intensity
IF = 100mA, tP = 20ms
Ie
16
—
mW/sr
Rise Time
IF = 100mA,
tr
—
800
—
ns
Fall Time
tP = 20ms
tf
—
800
—
ns
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PACKAGE DIMENSIONS
0.074 (1.9)
0.008 (0.21)
0.004 (0.11)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3)
.118 (3.0)
.102 (2.6)
CATHODE
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
T-3/4 (2mm) Surface Mount Package
Tape & Reel Option (See Tape & Reel Specifications)
Lead Form Options: Gullwing, Yoke, Z-Bend
Narrow Emission Angle, 24°
Wavelength = 880nm, AlGaAs
Clear Lens
Matched Photosensor: QSB363
High Radiant Intensity
ANODE
CATHODE
SCHEMATIC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QEB373.ZR | 制造商:Fairchild Semiconductor Corporation 功能描述:TAPE REEL / T3-4 ALGAAS LED Z BEND T-R |
| QEB373_06 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Subminiature Plastic Infrared Emitting Diode |
| QEB373_Q | 功能描述:紅外發(fā)射源 T3-4 ALGAAS LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QEB373GR | 功能描述:紅外發(fā)射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QEB373YR | 功能描述:紅外發(fā)射源 Subminiature LED Plastic RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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