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參數(shù)資料
| 型號(hào)： | Q6X8E4V |
| 元件分類： | 晶閘管 |
| 英文描述： | 0.8 A, TRIAC, TO-92 |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 516K |
| 代理商： | Q6X8E4V |
Triacs
Teccor Electronics, Inc.
2-5
Triacs
(972) 580-7777
VTM
IH
IGTM
PGM
PG(AV)
ITSM
dv/dt(c)
dv/dt
tgt
I2t
di/dt
Peak On-
State Voltage
at Maximum
Rated RMS
Current
TC = 25°C
(1) (5)
Volts
Holding
Current
(DC) Gate
Open
(1) (8) (12)
mAmps
Peak Gate
Trigger Current
(14)
Amps
Peak Gate
Power
Dissipation
(14)
IGT ≤ IGTM
Watts
Average
Gate
Power
Dissipa-
tion
Watts
Peak
One-Cycle
Surge
(9) (13)
Amps
Critical Rate-of-Rise
of Commutation
Voltage at Rated
VDRM & IT(RMS)
Commutating
di/dt = 0.54
Rated IT(RMS)/ms
Gate Unenergized
(1) (4) (13)
Volts/
Sec
Critical Rate-of-
Rise of Off-State
Voltage at Rated
VDRM Gate Open
(1)
Volts/
Sec
Gate
Controlled
Turn-On
Time
IGT = 200mA
0.1
s Rise
Time
(10) (17)
Sec
RMS
Surge
(Non-
Repeti-
tive) On-
State for
Period of
8.3ms For
Fusing
Amps2Sec
Maximum
Rate-of-
Change of
On-State
Current
IGT = 200mA
with 0.1
s
Rise Time
Amps/
Sec
60Hz
50Hz
TC =
100°C
TC =
125°C
MAX
TYP
MIN
TYP
1.6
50
1.8
20
0.5
120
100
4
350
225
3
60
70
1.6
50
1.8
20
0.5
120
100
4
350
225
3
60
70
1.6
50
1.8
20
0.5
120
100
4
300
200
3
60
70
1.6
50
1.8
20
0.5
120
100
4
300
200
3
60
70
1.6
50
1.8
20
0.5
120
100
4
250
175
3
60
70
1.6
50
1.8
20
0.5
120
100
4
250
175
3
60
70
1.6
70
2.0
20
0.5
200
167
4
400
275
4
166
100
1.6
70
2.0
20
0.5
200
167
4
400
275
4
166
100
1.6
70
2.0
20
0.5
200
167
4
350
225
4
166
100
1.6
70
2.0
20
0.5
200
167
4
350
225
4
166
100
1.6
70
2.0
20
0.5
200
167
4
300
200
4
166
100
1.6
70
2.0
20
0.5
200
167
4
300
200
4
166
100
1.8
100
2.0
20
0.5
200
167
5
400
275
4
166
100
1.8
100
2.0
20
0.5
200
167
5
400
275
4
166
100
1.8
100
2.0
20
0.5
200
167
5
350
225
4
166
100
1.8
100
2.0
20
0.5
200
167
5
350
225
4
166
100
1.8
100
2.0
20
0.5
200
167
5
300
200
4
166
100
1.8
100
2.0
20
0.5
200
167
5
300
200
4
166
100
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