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參數(shù)資料
| 型號： | Q67060-S7007A2 |
| 英文描述： | TRANSISTOR SMD PROFET LESITUNGS MOSFET |
| 中文描述： | 晶體管貼片MOSFET的普羅費LESITUNGS |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 138K |
| 代理商： | Q67060-S7007A2 |
13.07.1998
Semiconductor Group
Page 2
BTS 117
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Drain source voltage
Symbol
V
DS
V
DS(SC)
I
IN
Unit
V
Value
60
32
Drain source voltage for short circuit protection
Continuous input current
1)
-0.2V
≤
V
IN
≤
10V
V
IN
< -0.2V or V
IN
> 10V
Operating temperature
Storage temperature
no limit
| I
IN
|
≤
2
- 40 ... +150
- 55 ... +150
mA
T
j
T
stg
P
tot
°C
Power dissipation
T
C
= 25 °C
Unclamped single pulse inductive energy
I
D(ISO)
= 3.5 A
E
lectro
s
tatic
d
ischarge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
50
W
1000
mJ
E
AS
V
ESD
3000
V
Load dump protection V
LoadDump2)
= V
A
+ V
S
V
IN
=low or high; V
A
=13.5 V
t
d
= 400 ms, R
I
= 2
, I
D
=0,5*3.5A
t
d
= 400 ms, R
I
= 2
, I
D
= 3.5A
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
75
70
V
V
LD
E
40/150/56
Thermal resistance
junction - case:
junction - ambient:
R
thJC
R
thJA
R
thJA
2.5
75
K/W
SMD version, device on PCB:
3)
45
1
A sensor holding current of 500 μA has to be guaranted in the case of thermal shutdown (see also page 3)
2
VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for Drain connection. PCB is vertical
without blown air.
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