參數(shù)資料
型號: Q67060-S6700-A2
廠商: SIEMENS AG
英文描述: Smart Lowside Power Switch
中文描述: 智能Lowside電源開關(guān)
文件頁數(shù): 5/11頁
文件大小: 193K
代理商: Q67060-S6700-A2
14.07.1998
Semiconductor Group
Page 5
BTS 917
Block Diagramm
Terms
Inductive and overvoltage output clamp
HITFET
IN
CC
D
VIN
ID
VDS
1
4
5
IIN
3
S
Vbb
RCC
RL
CC
V
HITFET
VZ
D
S
Short circuit behaviour
The ground lead impedance of R
CC
should be as low as possible
VIN
ID
ID(SCp)
t 0
tm
t 2
ID(Lim)
t 1
Input circuit (ESD protection)
IN
ESD-ZD
I
Source
ESD zener diodes are not designed
for DC current > 2 mA @ V
IN
>10V.
t0: Turn on into a short circuit
tm: Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level wher
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q67060-S6700-A3 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch
Q67060-S6700-A4 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch
Q67060-S6703-A2 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch
Q67060-S6703-A4 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Lowside Power Switch
Q67060-S6952A3 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside High Current Power Switch