參數(shù)資料
型號: Q67060-S6307-A5
廠商: INFINEON TECHNOLOGIES AG
英文描述: High Speed CMOS Logic Dual 4-Stage Static Shift Registers 16-SOIC -55 to 125
中文描述: 智能感知高端功率開關
文件頁數(shù): 10/15頁
文件大小: 240K
代理商: Q67060-S6307-A5
BTS 640 S2
Semiconductor Group
Page 10
2003-Oct-01
V
bb
disconnect with charged external
inductive load
PROFET
V
ST
IS
OUT
GND
bb
6
2
4
3
5
IN
OUT
1
7
Vbb
high
D
R
L
L
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
E
bb
PROFET
IN
ST
OUT
GND
2
Vbb
=
E
E
EAS
L
R
ELoad
IS
1
5
3
4
6
7
OUT
Vbb
Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for R
L
>
0
:
E
AS
= I
L
·
L
2
·
R
L
·
(
V
bb
+
|V
OUT(CL)
|)
·
ln
(1+
I
L
·
R
L
|V
OUT(CL)
| )
相關PDF資料
PDF描述
Q67060-S6307-A6 High Speed CMOS Logic Dual 4-Stage Static Shift Registers 16-SOIC -55 to 125
Q67060-S6307-A7 High Speed CMOS Logic Quad Bilateral Switches 14-PDIP -55 to 125
Q67060-S6500-A2 TRANSISTOR HITFET
Q67060-S6501-A2 TRANSISTOR HITFET
Q67060-S7003-A2 TRANSISTOR SMD PROFET LESITUNGS MOSFET
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