參數(shù)資料
型號(hào): Q67060-S6112-A3
廠商: INFINEON TECHNOLOGIES AG
英文描述: High Speed CMOS Logic Dual 4-Input NOR Gates 14-SO -55 to 125
中文描述: 智能阻抗高側(cè)電源開關(guān)一個(gè)頻道:20mз
文件頁數(shù): 8/11頁
文件大小: 216K
代理商: Q67060-S6112-A3
BTS 441 T
Infineon Technologies AG
Page 8
2003-Oct-01
V
bb
disconnect with charged inductive
load
PROFET
V
IN
OUT
GND
bb
Vbb
high
For inductive load currents up to the limits defined by ZL
(max. ratings and diagram on page 8) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
Inductive load switch-off energy
dissipation
E
bb
PROFET
V
IN
OUT
GND
bb
=
E
E
EAS
L
R
ELoad
RL
L
{
L
Z
Energy stored in load inductance:
E
L
=
1/2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for RL
>
0
:
E
AS
= I
L
·
L
2
·
R
L
(
V
bb
+
|V
OUT(CL)
|)
ln
(1+
I
L
·
R
L
|V
OUT(CL)
| )
Maximum allowable load inductance for
a single switch off
L = f (IL );
Tj,start =
150°C, Vbb =
12
V, RL =
0
L [mH]
1000
1
10
100
0
5
10
15
20
25
30
35
0.1
IL [A]
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相關(guān)代理商/技術(shù)參數(shù)
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